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Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE

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Title: Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE
Authors: Kuboya, S. kuboya@k.u-tokyo.ac.jp, Kuroda, M.1, Katayama, R.1, Onabe, K.1
Source: Journal of Crystal Growth. May2011, Vol. 323 Issue 1, p26-29. 4p.
Subjects: Thin films, Optical properties, Nitrides, Photoluminescence, Molecular beam epitaxy, Crystal growth, Band gaps, Fluctuations (Physics), Curve fitting
Abstract: Abstract: The observation of bandgap reduction in InAsN by optical absorption is often somewhat obscure due to the band-filling effect caused by the high electron concentration associated with N incorporation. In this report, the detailed photoluminescence properties of 1.6-μm-thick InAsN films grown on semi-insulating GaAs(001) substrates by RF-MBE are investigated in relation with the carrier concentration. The PL peak energy at 10K clearly exhibits a redshift with increase in N content up to 1.84%, whereas it tends rapidly to a blueshift for N contents above 2.39%. The redshift is consistent with the bandgap reduction caused by the N incorporation, whereas the blueshift is attributed to the band-filling effect caused by the highly concentrated degenerate electrons. Moreover, it is found that the temperature dependent PL and the excitation power dependent PL are largely affected by carrier concentration and the potential fluctuations due to the non-uniform incorporation of N into the host. The bowing parameter c estimated from fitting with the quadratic curve, (1−x)E G,InAs+xE G,InN-c(1−x)x, is 2.2eV. [Copyright &y& Elsevier]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 60929018
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  Data: Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE
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  Data: <searchLink fieldCode="AR" term="%22Kuboya%2C+S%2E%22">Kuboya, S.</searchLink><i> kuboya@k.u-tokyo.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Kuroda%2C+M%2E%22">Kuroda, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Katayama%2C+R%2E%22">Katayama, R.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Onabe%2C+K%2E%22">Onabe, K.</searchLink><relatesTo>1</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Crystal+Growth%22">Journal of Crystal Growth</searchLink>. May2011, Vol. 323 Issue 1, p26-29. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink><br /><searchLink fieldCode="DE" term="%22Optical+properties%22">Optical properties</searchLink><br /><searchLink fieldCode="DE" term="%22Nitrides%22">Nitrides</searchLink><br /><searchLink fieldCode="DE" term="%22Photoluminescence%22">Photoluminescence</searchLink><br /><searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Crystal+growth%22">Crystal growth</searchLink><br /><searchLink fieldCode="DE" term="%22Band+gaps%22">Band gaps</searchLink><br /><searchLink fieldCode="DE" term="%22Fluctuations+%28Physics%29%22">Fluctuations (Physics)</searchLink><br /><searchLink fieldCode="DE" term="%22Curve+fitting%22">Curve fitting</searchLink>
– Name: Abstract
  Label: Abstract
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  Data: Abstract: The observation of bandgap reduction in InAsN by optical absorption is often somewhat obscure due to the band-filling effect caused by the high electron concentration associated with N incorporation. In this report, the detailed photoluminescence properties of 1.6-μm-thick InAsN films grown on semi-insulating GaAs(001) substrates by RF-MBE are investigated in relation with the carrier concentration. The PL peak energy at 10K clearly exhibits a redshift with increase in N content up to 1.84%, whereas it tends rapidly to a blueshift for N contents above 2.39%. The redshift is consistent with the bandgap reduction caused by the N incorporation, whereas the blueshift is attributed to the band-filling effect caused by the highly concentrated degenerate electrons. Moreover, it is found that the temperature dependent PL and the excitation power dependent PL are largely affected by carrier concentration and the potential fluctuations due to the non-uniform incorporation of N into the host. The bowing parameter c estimated from fitting with the quadratic curve, (1−x)E G,InAs+xE G,InN-c(1−x)x, is 2.2eV. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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      – Type: doi
        Value: 10.1016/j.jcrysgro.2010.12.017
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: 26
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      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Optical properties
        Type: general
      – SubjectFull: Nitrides
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      – SubjectFull: Photoluminescence
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      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Crystal growth
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      – SubjectFull: Band gaps
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      – SubjectFull: Fluctuations (Physics)
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      – SubjectFull: Curve fitting
        Type: general
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      – TitleFull: Carrier-concentration dependent photoluminescence of InAsN films grown by RF-MBE
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              Text: May2011
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