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Silicon Photomultipliers Electrical Model Extensive Analytical Analysis.

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Title: Silicon Photomultipliers Electrical Model Extensive Analytical Analysis.
Authors: Marano, D.1, Belluso, M.1, Bonanno, G.1, Billotta, S.1, Grillo, A.1, Garozzo, S.1, Romeo, G.1, Catalano, O.2, La Rosa, G.2, Sottile, G.2, Impiombato, D.2, Giarrusso, S.2
Source: IEEE Transactions on Nuclear Science. Feb2014, Vol. 61 Issue 1, p23-34. 12p.
Subjects: Silicon, Detectors, Photomultipliers, Technology, Electronics
Abstract: The present work aims to address a comprehensive analytical analysis of a new accurate equivalent electrical model of silicon photomultiplier (SiPM) detectors. The proposed circuit model allows to truthfully reproduce the output signal waveform generated by the light sensors apart from the specific technology adopted for the fabrication process, and can also be profitably exploited to perform reliable circuit-level simulations. A detailed and in-depth investigation of the functional parameters involved in the output pulse signals is here developed, and the most significant physical relationships are analytically derived as well. Experimental measurements are finally carried out on real devices, in order to validate the accuracy of the attained expressions, and good fittings are achieved between the analytical curve plots and the associated measurements results. The adopted analysis turns out to be particularly helpful when designing an optimum front-end architecture for SiPM detectors, since the performance of the entire detection system, especially in terms of dynamic range and timing resolution, can be accurately predicted as a function of the SiPM model parameters and the foremost features of the coupled front-end electronics. [ABSTRACT FROM PUBLISHER]
Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
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PubTypeId: academicJournal
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  Data: Silicon Photomultipliers Electrical Model Extensive Analytical Analysis.
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  Data: <searchLink fieldCode="AR" term="%22Marano%2C+D%2E%22">Marano, D.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Belluso%2C+M%2E%22">Belluso, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Bonanno%2C+G%2E%22">Bonanno, G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Billotta%2C+S%2E%22">Billotta, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Grillo%2C+A%2E%22">Grillo, A.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Garozzo%2C+S%2E%22">Garozzo, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Romeo%2C+G%2E%22">Romeo, G.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Catalano%2C+O%2E%22">Catalano, O.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22La+Rosa%2C+G%2E%22">La Rosa, G.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Sottile%2C+G%2E%22">Sottile, G.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Impiombato%2C+D%2E%22">Impiombato, D.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Giarrusso%2C+S%2E%22">Giarrusso, S.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22IEEE+Transactions+on+Nuclear+Science%22">IEEE Transactions on Nuclear Science</searchLink>. Feb2014, Vol. 61 Issue 1, p23-34. 12p.
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  Data: The present work aims to address a comprehensive analytical analysis of a new accurate equivalent electrical model of silicon photomultiplier (SiPM) detectors. The proposed circuit model allows to truthfully reproduce the output signal waveform generated by the light sensors apart from the specific technology adopted for the fabrication process, and can also be profitably exploited to perform reliable circuit-level simulations. A detailed and in-depth investigation of the functional parameters involved in the output pulse signals is here developed, and the most significant physical relationships are analytically derived as well. Experimental measurements are finally carried out on real devices, in order to validate the accuracy of the attained expressions, and good fittings are achieved between the analytical curve plots and the associated measurements results. The adopted analysis turns out to be particularly helpful when designing an optimum front-end architecture for SiPM detectors, since the performance of the entire detection system, especially in terms of dynamic range and timing resolution, can be accurately predicted as a function of the SiPM model parameters and the foremost features of the coupled front-end electronics. [ABSTRACT FROM PUBLISHER]
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  Label:
  Group: Ab
  Data: <i>Copyright of IEEE Transactions on Nuclear Science is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1109/TNS.2013.2283231
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              Text: Feb2014
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