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MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (0 0 1)

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Title: MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (0 0 1)
Authors: Nishikawa, A.1 nishikawa@onblab.k.u-tokyo.ac.jp, Katayama, R.1, Onabe, K.1, Shiraki, Y.2
Source: Journal of Crystal Growth. Apr2003, Vol. 251 Issue 1-4, p427. 5p.
Subjects: Thin films, Molecular beam epitaxy, Photorefractive materials
Abstract: The growth condition of GaAsN alloy films has been optimized for higher N contents, and the bandgap energy of the films and its temperature dependence have been investigated by photoreflectance spectroscopy. The GaAsN (N=0−4.5%) alloy films were grown on GaAs (0 0 1) substrates by molecular beam epitaxy equipped with a radio frequency plasma nitrogen source. The As4 flux was varied for the optimization of the growth. The films with a fairly flat surface and high crystal quality were obtained when the As4 flux was close to the V/III ratio of 1. The bandgap energy of GaAsN with the N content of 4.5% was measured as low as 0.93 eV (1.33 μm). In the low (<1%) N content region, the bowing parameter is estimated to be 22 eV. However, the deviation of the experimental data from the fitting curve becomes large as the N content increases due to the composition-dependent nature of the bowing. The temperature dependence of the bandgap energy becomes significantly weak with increasing N content. This suggests that the density of states around the band edge of GaAsN is modified from that of GaAs due to the localized states possibly originated from N clusters. [Copyright &y& Elsevier]
Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 9440960
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PubTypeId: academicJournal
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  Label: Title
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  Data: MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (0 0 1)
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  Data: &lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Nishikawa%2C+A%2E%22&quot;&gt;Nishikawa, A.&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt;&lt;i&gt; nishikawa@onblab.k.u-tokyo.ac.jp&lt;/i&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Katayama%2C+R%2E%22&quot;&gt;Katayama, R.&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Onabe%2C+K%2E%22&quot;&gt;Onabe, K.&lt;/searchLink&gt;&lt;relatesTo&gt;1&lt;/relatesTo&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;AR&quot; term=&quot;%22Shiraki%2C+Y%2E%22&quot;&gt;Shiraki, Y.&lt;/searchLink&gt;&lt;relatesTo&gt;2&lt;/relatesTo&gt;
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  Data: &lt;searchLink fieldCode=&quot;JN&quot; term=&quot;%22Journal+of+Crystal+Growth%22&quot;&gt;Journal of Crystal Growth&lt;/searchLink&gt;. Apr2003, Vol. 251 Issue 1-4, p427. 5p.
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  Data: &lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Thin+films%22&quot;&gt;Thin films&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Molecular+beam+epitaxy%22&quot;&gt;Molecular beam epitaxy&lt;/searchLink&gt;&lt;br /&gt;&lt;searchLink fieldCode=&quot;DE&quot; term=&quot;%22Photorefractive+materials%22&quot;&gt;Photorefractive materials&lt;/searchLink&gt;
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  Label: Abstract
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  Data: The growth condition of GaAsN alloy films has been optimized for higher N contents, and the bandgap energy of the films and its temperature dependence have been investigated by photoreflectance spectroscopy. The GaAsN (N=0−4.5%) alloy films were grown on GaAs (0 0 1) substrates by molecular beam epitaxy equipped with a radio frequency plasma nitrogen source. The As4 flux was varied for the optimization of the growth. The films with a fairly flat surface and high crystal quality were obtained when the As4 flux was close to the V/III ratio of 1. The bandgap energy of GaAsN with the N content of 4.5% was measured as low as 0.93 eV (1.33 μm). In the low (&lt;1%) N content region, the bowing parameter is estimated to be 22 eV. However, the deviation of the experimental data from the fitting curve becomes large as the N content increases due to the composition-dependent nature of the bowing. The temperature dependence of the bandgap energy becomes significantly weak with increasing N content. This suggests that the density of states around the band edge of GaAsN is modified from that of GaAs due to the localized states possibly originated from N clusters. [Copyright &amp;y&amp; Elsevier]
– Name: AbstractSuppliedCopyright
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  Data: &lt;i&gt;Copyright of Journal of Crystal Growth is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder&#39;s express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.&lt;/i&gt; (Copyright applies to all Abstracts.)
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        Value: 10.1016/S0022-0248(02)02189-9
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      – Code: eng
        Text: English
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        PageCount: 5
        StartPage: 427
    Subjects:
      – SubjectFull: Thin films
        Type: general
      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Photorefractive materials
        Type: general
    Titles:
      – TitleFull: MBE growth and photoreflectance study of GaAsN alloy films grown on GaAs (0 0 1)
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            NameFull: Nishikawa, A.
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            NameFull: Katayama, R.
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            NameFull: Onabe, K.
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            NameFull: Shiraki, Y.
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              M: 04
              Text: Apr2003
              Type: published
              Y: 2003
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