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Rutherford backscattering and nuclear reaction analyses of hydrogen ion-implanted ZnO bulk single crystals.

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Title: Rutherford backscattering and nuclear reaction analyses of hydrogen ion-implanted ZnO bulk single crystals.
Authors: Kaida, T.1, Kamioka, K.1, Ida, T.1, Kuriyama, K.1 kuri@ionbeam.hosei.ac.jp, Kushida, K.2, Kinomura, A.3
Source: Nuclear Instruments & Methods in Physics Research Section B. Aug2014, Vol. 332, p15-18. 4p.
Subjects: Rutherford backscattering spectrometry, Nuclear reactions, Hydrogen ions, Ion implantation, Zinc oxide, Single crystals
Abstract: Abstract: The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) photoluminescence (PL), and Van der Pauw methods. The H-ion implantation (peak concentration: 1.45×1020 cm−3) into ZnO is performed using a 500keV implanter. The resistivity decreases from 2.5×103 Ωcm for unimplanted ZnO to 6.5Ωcm for as-implanted one. RBS measurements show that Zn interstitial as a shallow donor is not recognized in as-implanted samples. From photoluminescence measurements, the broad green band emission is observed in as-implanted samples. NRA measurements for as-implanted ZnO suggest the existence of the oxygen interstitial. The origins of the low resistivity in the as-implanted sample are attributed to both the H interstitial as a shallow donor and complex donor between H and disordered O. The activation energy of H related donors estimated from the temperature dependence of carrier concentration is 29meV. [Copyright &y& Elsevier]
Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
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DbLabel: Engineering Source
An: 96445895
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PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Rutherford backscattering and nuclear reaction analyses of hydrogen ion-implanted ZnO bulk single crystals.
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  Data: <searchLink fieldCode="AR" term="%22Kaida%2C+T%2E%22">Kaida, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kamioka%2C+K%2E%22">Kamioka, K.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Ida%2C+T%2E%22">Ida, T.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Kuriyama%2C+K%2E%22">Kuriyama, K.</searchLink><relatesTo>1</relatesTo><i> kuri@ionbeam.hosei.ac.jp</i><br /><searchLink fieldCode="AR" term="%22Kushida%2C+K%2E%22">Kushida, K.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Kinomura%2C+A%2E%22">Kinomura, A.</searchLink><relatesTo>3</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Nuclear+Instruments+%26+Methods+in+Physics+Research+Section+B%22">Nuclear Instruments & Methods in Physics Research Section B</searchLink>. Aug2014, Vol. 332, p15-18. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Rutherford+backscattering+spectrometry%22">Rutherford backscattering spectrometry</searchLink><br /><searchLink fieldCode="DE" term="%22Nuclear+reactions%22">Nuclear reactions</searchLink><br /><searchLink fieldCode="DE" term="%22Hydrogen+ions%22">Hydrogen ions</searchLink><br /><searchLink fieldCode="DE" term="%22Ion+implantation%22">Ion implantation</searchLink><br /><searchLink fieldCode="DE" term="%22Zinc+oxide%22">Zinc oxide</searchLink><br /><searchLink fieldCode="DE" term="%22Single+crystals%22">Single crystals</searchLink>
– Name: Abstract
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  Data: Abstract: The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) photoluminescence (PL), and Van der Pauw methods. The H-ion implantation (peak concentration: 1.45×1020 cm−3) into ZnO is performed using a 500keV implanter. The resistivity decreases from 2.5×103 Ωcm for unimplanted ZnO to 6.5Ωcm for as-implanted one. RBS measurements show that Zn interstitial as a shallow donor is not recognized in as-implanted samples. From photoluminescence measurements, the broad green band emission is observed in as-implanted samples. NRA measurements for as-implanted ZnO suggest the existence of the oxygen interstitial. The origins of the low resistivity in the as-implanted sample are attributed to both the H interstitial as a shallow donor and complex donor between H and disordered O. The activation energy of H related donors estimated from the temperature dependence of carrier concentration is 29meV. [Copyright &y& Elsevier]
– Name: AbstractSuppliedCopyright
  Label:
  Group: Ab
  Data: <i>Copyright of Nuclear Instruments & Methods in Physics Research Section B is the property of Elsevier B.V. and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.nimb.2014.02.020
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        Text: English
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      – SubjectFull: Nuclear reactions
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      – SubjectFull: Ion implantation
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      – SubjectFull: Zinc oxide
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      – SubjectFull: Single crystals
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              Text: Aug2014
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