Rutherford backscattering and nuclear reaction analyses of hydrogen ion-implanted ZnO bulk single crystals.
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| Title: | Rutherford backscattering and nuclear reaction analyses of hydrogen ion-implanted ZnO bulk single crystals. |
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| Authors: | Kaida, T.1, Kamioka, K.1, Ida, T.1, Kuriyama, K.1 kuri@ionbeam.hosei.ac.jp, Kushida, K.2, Kinomura, A.3 |
| Source: | Nuclear Instruments & Methods in Physics Research Section B. Aug2014, Vol. 332, p15-18. 4p. |
| Subjects: | Rutherford backscattering spectrometry, Nuclear reactions, Hydrogen ions, Ion implantation, Zinc oxide, Single crystals |
| Abstract: | Abstract: The origins of low resistivity in H ion-implanted ZnO bulk single crystals are studied by Rutherford backscattering spectrometry (RBS), nuclear reaction analysis (NRA) photoluminescence (PL), and Van der Pauw methods. The H-ion implantation (peak concentration: 1.45×1020 cm−3) into ZnO is performed using a 500keV implanter. The resistivity decreases from 2.5×103 Ωcm for unimplanted ZnO to 6.5Ωcm for as-implanted one. RBS measurements show that Zn interstitial as a shallow donor is not recognized in as-implanted samples. From photoluminescence measurements, the broad green band emission is observed in as-implanted samples. NRA measurements for as-implanted ZnO suggest the existence of the oxygen interstitial. The origins of the low resistivity in the as-implanted sample are attributed to both the H interstitial as a shallow donor and complex donor between H and disordered O. The activation energy of H related donors estimated from the temperature dependence of carrier concentration is 29meV. [Copyright &y& Elsevier] |
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| Database: | Engineering Source |
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