A 346 µm 2 VCO-Based, Reference-Free, Self-Timed Sensor Interface for Cubic-Millimeter Sensor Nodes in 28 nm CMOS.
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| Title: | A 346 µm 2 VCO-Based, Reference-Free, Self-Timed Sensor Interface for Cubic-Millimeter Sensor Nodes in 28 nm CMOS. |
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| Authors: | Fick, Laura1, Fick, David1, Alioto, Massimo2, Blaauw, David1, Sylvester, Dennis1 |
| Source: | IEEE Journal of Solid-State Circuits. Nov2014, Vol. 49 Issue 11, p2462-2473. 12p. |
| Subjects: | Complementary metal oxide semiconductors, Wireless sensor nodes, Interface circuits, Scalability, Systems design |
| Abstract: | We present a 346 µm 2 reference-free, asynchronous VCO-based sensor interface circuit demonstrated in 28 nm LP bulk CMOS. This design is specifically for sensor node interfaces which do not have the power or volume available for the high accuracy current sources, voltage sources, or low jitter timing references needed for traditional ADCs. By using a straightforward VCO design, it achieves wide resolution, voltage scalability, and process portability while consuming only \sim1/100th the area of prior approaches and avoiding costly reference circuitry. In the design measured for this paper, resolution can be scaled from 2.8 to 11.7 bits and V DD from 500 mV to 1.0 V. The design contains a single-point calibration scheme that works across temperature, voltage, and resolution settings. Minimum power consumption is 11.7 µW at 0.6 V V DD and minimum energy per conversion step is 41.2 fJ/b at 0.6 V V DD and 9.42 bits of effective resolution. [ABSTRACT FROM AUTHOR] |
| Copyright of IEEE Journal of Solid-State Circuits is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.) | |
| Database: | Engineering Source |
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| Header | DbId: egs DbLabel: Engineering Source An: 99082957 AccessLevel: 6 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: A 346 µm 2 VCO-Based, Reference-Free, Self-Timed Sensor Interface for Cubic-Millimeter Sensor Nodes in 28 nm CMOS. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AR" term="%22Fick%2C+Laura%22">Fick, Laura</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fick%2C+David%22">Fick, David</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Alioto%2C+Massimo%22">Alioto, Massimo</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Blaauw%2C+David%22">Blaauw, David</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Sylvester%2C+Dennis%22">Sylvester, Dennis</searchLink><relatesTo>1</relatesTo> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22IEEE+Journal+of+Solid-State+Circuits%22">IEEE Journal of Solid-State Circuits</searchLink>. Nov2014, Vol. 49 Issue 11, p2462-2473. 12p. – Name: Subject Label: Subjects Group: Su Data: <searchLink fieldCode="DE" term="%22Complementary+metal+oxide+semiconductors%22">Complementary metal oxide semiconductors</searchLink><br /><searchLink fieldCode="DE" term="%22Wireless+sensor+nodes%22">Wireless sensor nodes</searchLink><br /><searchLink fieldCode="DE" term="%22Interface+circuits%22">Interface circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Scalability%22">Scalability</searchLink><br /><searchLink fieldCode="DE" term="%22Systems+design%22">Systems design</searchLink> – Name: Abstract Label: Abstract Group: Ab Data: We present a 346 µm 2 reference-free, asynchronous VCO-based sensor interface circuit demonstrated in 28 nm LP bulk CMOS. This design is specifically for sensor node interfaces which do not have the power or volume available for the high accuracy current sources, voltage sources, or low jitter timing references needed for traditional ADCs. By using a straightforward VCO design, it achieves wide resolution, voltage scalability, and process portability while consuming only \sim1/100th the area of prior approaches and avoiding costly reference circuitry. In the design measured for this paper, resolution can be scaled from 2.8 to 11.7 bits and V DD from 500 mV to 1.0 V. The design contains a single-point calibration scheme that works across temperature, voltage, and resolution settings. Minimum power consumption is 11.7 µW at 0.6 V V DD and minimum energy per conversion step is 41.2 fJ/b at 0.6 V V DD and 9.42 bits of effective resolution. [ABSTRACT FROM AUTHOR] – Name: AbstractSuppliedCopyright Label: Group: Ab Data: <i>Copyright of IEEE Journal of Solid-State Circuits is the property of IEEE and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.) |
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| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/JSSC.2014.2358589 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 12 StartPage: 2462 Subjects: – SubjectFull: Complementary metal oxide semiconductors Type: general – SubjectFull: Wireless sensor nodes Type: general – SubjectFull: Interface circuits Type: general – SubjectFull: Scalability Type: general – SubjectFull: Systems design Type: general Titles: – TitleFull: A 346 µm 2 VCO-Based, Reference-Free, Self-Timed Sensor Interface for Cubic-Millimeter Sensor Nodes in 28 nm CMOS. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Fick, Laura – PersonEntity: Name: NameFull: Fick, David – PersonEntity: Name: NameFull: Alioto, Massimo – PersonEntity: Name: NameFull: Blaauw, David – PersonEntity: Name: NameFull: Sylvester, Dennis IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 11 Text: Nov2014 Type: published Y: 2014 Identifiers: – Type: issn-print Value: 00189200 Numbering: – Type: volume Value: 49 – Type: issue Value: 11 Titles: – TitleFull: IEEE Journal of Solid-State Circuits Type: main |
| ResultId | 1 |
