APA (7th ed.) Citation

Santini, T., Morand, S., Fouladirad, M., Phung, L., Miller, F., Foucher, B., . . . Allard, B. (2014). Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment. Microelectronics Reliability, 54(9/10), 1718. https://doi.org/10.1016/j.microrel.2014.07.082

Chicago Style (17th ed.) Citation

Santini, T., S. Morand, M. Fouladirad, L.V Phung, F. Miller, B. Foucher, A. Grall, and B. Allard. "Accelerated Degradation Data of SiC MOSFETs for Lifetime and Remaining Useful Life Assessment." Microelectronics Reliability 54, no. 9/10 (2014): 1718. https://doi.org/10.1016/j.microrel.2014.07.082.

MLA (9th ed.) Citation

Santini, T., et al. "Accelerated Degradation Data of SiC MOSFETs for Lifetime and Remaining Useful Life Assessment." Microelectronics Reliability, vol. 54, no. 9/10, 2014, p. 1718, https://doi.org/10.1016/j.microrel.2014.07.082.