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Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment.

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Title: Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment.
Authors: Santini, T.1,2 thomas.santini@airbus.com, Morand, S.1, Fouladirad, M.3, Phung, L.V.2, Miller, F.1, Foucher, B.1, Grall, A.3, Allard, B.2
Source: Microelectronics Reliability. Sep2014, Vol. 54 Issue 9/10, p1718-1723. 6p.
Subjects: Silicon carbide, Metal oxide semiconductor field-effect transistors, Data analysis, Electric potential, Power electronics
Abstract: The phenomenon of threshold voltage instability has been reported to be a critical issue for the first generation of commercial SiC MOSFETs. For aeronautic mission profile, the long term reliability of such device has to be estimated prior to any integration. As far as the author knows, this paper proposes one of the first attempts to use a non-homogeneous gamma process to model the threshold voltage degradation of a commercial SiC MOSFET. Such approach allows evaluating the time to failure as well as it distribution thanks to the proposed Acceleration degradation testing methodology. All the data collected during the ageing tests will be used to model an acceleration factor and to extrapolate the Time-To-Failure in a given application. Ultimately, the use of gamma process to evaluate the Remaining Useful Life of electronic component is described as a first step toward prognostic of Remaining Useful Life in embedded power electronics. [ABSTRACT FROM AUTHOR]
Copyright of Microelectronics Reliability is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Engineering Source
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Header DbId: egs
DbLabel: Engineering Source
An: 99231989
AccessLevel: 6
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Accelerated degradation data of SiC MOSFETs for lifetime and Remaining Useful Life assessment.
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  Data: <searchLink fieldCode="AR" term="%22Santini%2C+T%2E%22">Santini, T.</searchLink><relatesTo>1,2</relatesTo><i> thomas.santini@airbus.com</i><br /><searchLink fieldCode="AR" term="%22Morand%2C+S%2E%22">Morand, S.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Fouladirad%2C+M%2E%22">Fouladirad, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Phung%2C+L%2EV%2E%22">Phung, L.V.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AR" term="%22Miller%2C+F%2E%22">Miller, F.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Foucher%2C+B%2E%22">Foucher, B.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AR" term="%22Grall%2C+A%2E%22">Grall, A.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AR" term="%22Allard%2C+B%2E%22">Allard, B.</searchLink><relatesTo>2</relatesTo>
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  Data: <searchLink fieldCode="JN" term="%22Microelectronics+Reliability%22">Microelectronics Reliability</searchLink>. Sep2014, Vol. 54 Issue 9/10, p1718-1723. 6p.
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  Data: <searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Metal+oxide+semiconductor+field-effect+transistors%22">Metal oxide semiconductor field-effect transistors</searchLink><br /><searchLink fieldCode="DE" term="%22Data+analysis%22">Data analysis</searchLink><br /><searchLink fieldCode="DE" term="%22Electric+potential%22">Electric potential</searchLink><br /><searchLink fieldCode="DE" term="%22Power+electronics%22">Power electronics</searchLink>
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  Data: The phenomenon of threshold voltage instability has been reported to be a critical issue for the first generation of commercial SiC MOSFETs. For aeronautic mission profile, the long term reliability of such device has to be estimated prior to any integration. As far as the author knows, this paper proposes one of the first attempts to use a non-homogeneous gamma process to model the threshold voltage degradation of a commercial SiC MOSFET. Such approach allows evaluating the time to failure as well as it distribution thanks to the proposed Acceleration degradation testing methodology. All the data collected during the ageing tests will be used to model an acceleration factor and to extrapolate the Time-To-Failure in a given application. Ultimately, the use of gamma process to evaluate the Remaining Useful Life of electronic component is described as a first step toward prognostic of Remaining Useful Life in embedded power electronics. [ABSTRACT FROM AUTHOR]
– Name: AbstractSuppliedCopyright
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  Data: <i>Copyright of Microelectronics Reliability is the property of Pergamon Press - An Imprint of Elsevier Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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        Value: 10.1016/j.microrel.2014.07.082
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        Text: English
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        Type: general
      – SubjectFull: Metal oxide semiconductor field-effect transistors
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      – SubjectFull: Electric potential
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              Text: Sep2014
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