Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.

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Title: Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.
Authors: Tanaka A; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan. a_tanaka@nuee.nagoya-u.ac.jp.; National Institute for Materials Science, Tsukuba, 987-6543, Japan. a_tanaka@nuee.nagoya-u.ac.jp., Sugiura R; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Kawaguchi D; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Wani Y; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Watanabe H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Sena H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Ando Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Honda Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Igasaki Y; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Wakejima A; Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Aichi, 466-8555, Japan., Ando Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Amano H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.
Source: Scientific reports [Sci Rep] 2022 May 17; Vol. 12 (1), pp. 8175. Date of Electronic Publication: 2022 May 17.
Publication Type: Published Erratum
Journal Info: Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: MEDLINE; PubMed not MEDLINE
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Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 35581329
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PreciseRelevancyScore: 0
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Tanaka+A%22">Tanaka A</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan. a_tanaka@nuee.nagoya-u.ac.jp.; National Institute for Materials Science, Tsukuba, 987-6543, Japan. a_tanaka@nuee.nagoya-u.ac.jp.<br /><searchLink fieldCode="AU" term="%22Sugiura+R%22">Sugiura R</searchLink>; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan.<br /><searchLink fieldCode="AU" term="%22Kawaguchi+D%22">Kawaguchi D</searchLink>; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan.<br /><searchLink fieldCode="AU" term="%22Wani+Y%22">Wani Y</searchLink>; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan.<br /><searchLink fieldCode="AU" term="%22Watanabe+H%22">Watanabe H</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Sena+H%22">Sena H</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Ando+Y%22">Ando Y</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Honda+Y%22">Honda Y</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Igasaki+Y%22">Igasaki Y</searchLink>; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan.<br /><searchLink fieldCode="AU" term="%22Wakejima+A%22">Wakejima A</searchLink>; Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Aichi, 466-8555, Japan.<br /><searchLink fieldCode="AU" term="%22Ando+Y%22">Ando Y</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Amano+H%22">Amano H</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101563288%22">Scientific reports</searchLink> [Sci Rep] 2022 May 17; Vol. 12 (1), pp. 8175. <i>Date of Electronic Publication: </i>2022 May 17.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Published Erratum
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Publishing+Group%22">Nature Publishing Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101563288 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2045-2322 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220452322%22">20452322 </searchLink><i>NLM ISO Abbreviation: </i>Sci Rep <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=35581329
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1038/s41598-022-12628-0
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 8175
    Titles:
      – TitleFull: Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Tanaka A
      – PersonEntity:
          Name:
            NameFull: Sugiura R
      – PersonEntity:
          Name:
            NameFull: Kawaguchi D
      – PersonEntity:
          Name:
            NameFull: Wani Y
      – PersonEntity:
          Name:
            NameFull: Watanabe H
      – PersonEntity:
          Name:
            NameFull: Sena H
      – PersonEntity:
          Name:
            NameFull: Ando Y
      – PersonEntity:
          Name:
            NameFull: Honda Y
      – PersonEntity:
          Name:
            NameFull: Igasaki Y
      – PersonEntity:
          Name:
            NameFull: Wakejima A
      – PersonEntity:
          Name:
            NameFull: Ando Y
      – PersonEntity:
          Name:
            NameFull: Amano H
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 17
              M: 05
              Text: 2022 May 17
              Type: published
              Y: 2022
          Identifiers:
            – Type: issn-electronic
              Value: 2045-2322
          Numbering:
            – Type: volume
              Value: 12
            – Type: issue
              Value: 1
          Titles:
            – TitleFull: Scientific reports
              Type: main
ResultId 1