Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors.
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| Title: | Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors. |
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| Authors: | Tanaka A; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan. a_tanaka@nuee.nagoya-u.ac.jp.; National Institute for Materials Science, Tsukuba, 987-6543, Japan. a_tanaka@nuee.nagoya-u.ac.jp., Sugiura R; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Kawaguchi D; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Wani Y; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Watanabe H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Sena H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Ando Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Honda Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Igasaki Y; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan., Wakejima A; Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Aichi, 466-8555, Japan., Ando Y; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan., Amano H; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan. |
| Source: | Scientific reports [Sci Rep] 2022 May 17; Vol. 12 (1), pp. 8175. Date of Electronic Publication: 2022 May 17. |
| Publication Type: | Published Erratum |
| Journal Info: | Publisher: Nature Publishing Group Country of Publication: England NLM ID: 101563288 Publication Model: Electronic Cited Medium: Internet ISSN: 2045-2322 (Electronic) Linking ISSN: 20452322 NLM ISO Abbreviation: Sci Rep Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 35581329 AccessLevel: 2 PubTypeId: unknown PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Tanaka+A%22">Tanaka A</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan. a&#95;tanaka@nuee.nagoya-u.ac.jp.; National Institute for Materials Science, Tsukuba, 987-6543, Japan. a&#95;tanaka@nuee.nagoya-u.ac.jp.<br /><searchLink fieldCode="AU" term="%22Sugiura+R%22">Sugiura R</searchLink>; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan.<br /><searchLink fieldCode="AU" term="%22Kawaguchi+D%22">Kawaguchi D</searchLink>; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan.<br /><searchLink fieldCode="AU" term="%22Wani+Y%22">Wani Y</searchLink>; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan.<br /><searchLink fieldCode="AU" term="%22Watanabe+H%22">Watanabe H</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Sena+H%22">Sena H</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Ando+Y%22">Ando Y</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Honda+Y%22">Honda Y</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Igasaki+Y%22">Igasaki Y</searchLink>; Research & Development Department, Electron Tube Division, Hamamatsu Photonics K. K., Shizuoka, 438-0193, Japan.<br /><searchLink fieldCode="AU" term="%22Wakejima+A%22">Wakejima A</searchLink>; Department of Electrical and Mechanical Engineering, Nagoya Institute of Technology, Aichi, 466-8555, Japan.<br /><searchLink fieldCode="AU" term="%22Ando+Y%22">Ando Y</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan.<br /><searchLink fieldCode="AU" term="%22Amano+H%22">Amano H</searchLink>; Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Aichi, 464-8601, Japan. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101563288%22">Scientific reports</searchLink> [Sci Rep] 2022 May 17; Vol. 12 (1), pp. 8175. <i>Date of Electronic Publication: </i>2022 May 17. – Name: TypePub Label: Publication Type Group: TypPub Data: Published Erratum – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Publishing+Group%22">Nature Publishing Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101563288 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2045-2322 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220452322%22">20452322 </searchLink><i>NLM ISO Abbreviation: </i>Sci Rep <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=35581329 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1038/s41598-022-12628-0 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: 8175 Titles: – TitleFull: Author Correction: Laser slice thinning of GaN-on-GaN high electron mobility transistors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Tanaka A – PersonEntity: Name: NameFull: Sugiura R – PersonEntity: Name: NameFull: Kawaguchi D – PersonEntity: Name: NameFull: Wani Y – PersonEntity: Name: NameFull: Watanabe H – PersonEntity: Name: NameFull: Sena H – PersonEntity: Name: NameFull: Ando Y – PersonEntity: Name: NameFull: Honda Y – PersonEntity: Name: NameFull: Igasaki Y – PersonEntity: Name: NameFull: Wakejima A – PersonEntity: Name: NameFull: Ando Y – PersonEntity: Name: NameFull: Amano H IsPartOfRelationships: – BibEntity: Dates: – D: 17 M: 05 Text: 2022 May 17 Type: published Y: 2022 Identifiers: – Type: issn-electronic Value: 2045-2322 Numbering: – Type: volume Value: 12 – Type: issue Value: 1 Titles: – TitleFull: Scientific reports Type: main |
| ResultId | 1 |