Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites.
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| Title: | Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites. |
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| Authors: | Bruevich V; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Kasaei L; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Rangan S; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Hijazi H; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Zhang Z; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Emge T; Wright-Rieman Laboratories, Rutgers University, 610 Taylor Road, Piscataway, NJ, 08854, USA., Andrei EY; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Bartynski RA; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Feldman LC; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Podzorov V; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA. |
| Source: | Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Oct; Vol. 34 (43), pp. e2205055. Date of Electronic Publication: 2022 Sep 25. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 36026556 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Bruevich+V%22">Bruevich V</searchLink>; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.<br /><searchLink fieldCode="AU" term="%22Kasaei+L%22">Kasaei L</searchLink>; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.<br /><searchLink fieldCode="AU" term="%22Rangan+S%22">Rangan S</searchLink>; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.<br /><searchLink fieldCode="AU" term="%22Hijazi+H%22">Hijazi H</searchLink>; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.<br /><searchLink fieldCode="AU" term="%22Zhang+Z%22">Zhang Z</searchLink>; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.<br /><searchLink fieldCode="AU" term="%22Emge+T%22">Emge T</searchLink>; Wright-Rieman Laboratories, Rutgers University, 610 Taylor Road, Piscataway, NJ, 08854, USA.<br /><searchLink fieldCode="AU" term="%22Andrei+EY%22">Andrei EY</searchLink>; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.<br /><searchLink fieldCode="AU" term="%22Bartynski+RA%22">Bartynski RA</searchLink>; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.<br /><searchLink fieldCode="AU" term="%22Feldman+LC%22">Feldman LC</searchLink>; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA.<br /><searchLink fieldCode="AU" term="%22Podzorov+V%22">Podzorov V</searchLink>; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%229885358%22">Advanced materials (Deerfield Beach, Fla.)</searchLink> [Adv Mater] 2022 Oct; Vol. 34 (43), pp. e2205055. <i>Date of Electronic Publication: </i>2022 Sep 25. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Wiley-VCH%22">Wiley-VCH </searchLink><i>Country of Publication: </i>Germany <i>NLM ID: </i>9885358 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1521-4095 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2209359648%22">09359648 </searchLink><i>NLM ISO Abbreviation: </i>Adv Mater <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=36026556 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1002/adma.202205055 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: e2205055 Titles: – TitleFull: Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Bruevich V – PersonEntity: Name: NameFull: Kasaei L – PersonEntity: Name: NameFull: Rangan S – PersonEntity: Name: NameFull: Hijazi H – PersonEntity: Name: NameFull: Zhang Z – PersonEntity: Name: NameFull: Emge T – PersonEntity: Name: NameFull: Andrei EY – PersonEntity: Name: NameFull: Bartynski RA – PersonEntity: Name: NameFull: Feldman LC – PersonEntity: Name: NameFull: Podzorov V IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 10 Text: 2022 Oct Type: published Y: 2022 Identifiers: – Type: issn-electronic Value: 1521-4095 Numbering: – Type: volume Value: 34 – Type: issue Value: 43 Titles: – TitleFull: Advanced materials (Deerfield Beach, Fla.) Type: main |
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