Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites.
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| Title: | Intrinsic (Trap-Free) Transistors Based on Epitaxial Single-Crystal Perovskites. |
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| Authors: | Bruevich V; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Kasaei L; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Rangan S; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Hijazi H; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Zhang Z; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Emge T; Wright-Rieman Laboratories, Rutgers University, 610 Taylor Road, Piscataway, NJ, 08854, USA., Andrei EY; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Bartynski RA; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Feldman LC; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA., Podzorov V; Dept. of Physics and Astronomy, Rutgers University, 136 Frelinghuysen Road, Piscataway, NJ, 08854, USA. |
| Source: | Advanced materials (Deerfield Beach, Fla.) [Adv Mater] 2022 Oct; Vol. 34 (43), pp. e2205055. Date of Electronic Publication: 2022 Sep 25. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Wiley-VCH Country of Publication: Germany NLM ID: 9885358 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1521-4095 (Electronic) Linking ISSN: 09359648 NLM ISO Abbreviation: Adv Mater Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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