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Bulk Heterojunction Upconversion Thin Films Fabricated via One-Step Solution Deposition.

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Title: Bulk Heterojunction Upconversion Thin Films Fabricated via One-Step Solution Deposition.
Authors: Hu M; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Belliveau E; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Wu Y; Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States., Narayanan P; Department of Chemistry, Stanford University, Stanford, California 94305, United States., Feng D; Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States., Hamid R; Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States., Murrietta N; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Ahmed GH; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States., Kats MA; Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States., Congreve DN; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
Source: ACS nano [ACS Nano] 2023 Nov 28; Vol. 17 (22), pp. 22642-22655. Date of Electronic Publication: 2023 Nov 14.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Bulk Heterojunction Upconversion Thin Films Fabricated via One-Step Solution Deposition.
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  Data: <searchLink fieldCode="AU" term="%22Hu+M%22">Hu M</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.<br /><searchLink fieldCode="AU" term="%22Belliveau+E%22">Belliveau E</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.<br /><searchLink fieldCode="AU" term="%22Wu+Y%22">Wu Y</searchLink>; Department of Chemical Engineering, Stanford University, Stanford, California 94305, United States.<br /><searchLink fieldCode="AU" term="%22Narayanan+P%22">Narayanan P</searchLink>; Department of Chemistry, Stanford University, Stanford, California 94305, United States.<br /><searchLink fieldCode="AU" term="%22Feng+D%22">Feng D</searchLink>; Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Hamid+R%22">Hamid R</searchLink>; Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Murrietta+N%22">Murrietta N</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.<br /><searchLink fieldCode="AU" term="%22Ahmed+GH%22">Ahmed GH</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.<br /><searchLink fieldCode="AU" term="%22Kats+MA%22">Kats MA</searchLink>; Department of Electrical and Computer Engineering, University of Wisconsin─Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Congreve+DN%22">Congreve DN</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, California 94305, United States.
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  Data: <searchLink fieldCode="JN" term="%22101313589%22">ACS nano</searchLink> [ACS Nano] 2023 Nov 28; Vol. 17 (22), pp. 22642-22655. <i>Date of Electronic Publication: </i>2023 Nov 14.
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        Value: 10.1021/acsnano.3c06955
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              Text: 2023 Nov 28
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