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Nanoscale Titanium Oxide Memristive Structures for Neuromorphic Applications: Atomic Force Anodization Techniques, Modeling, Chemical Composition, and Resistive Switching Properties.

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Title: Nanoscale Titanium Oxide Memristive Structures for Neuromorphic Applications: Atomic Force Anodization Techniques, Modeling, Chemical Composition, and Resistive Switching Properties.
Authors: Avilov VI; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia., Tominov RV; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.; Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia., Vakulov ZE; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia., Rodriguez DJ; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia., Polupanov NV; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.; Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia., Smirnov VA; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.; Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.
Source: Nanomaterials (Basel, Switzerland) [Nanomaterials (Basel)] 2025 Jan 06; Vol. 15 (1). Date of Electronic Publication: 2025 Jan 06.
Publication Type: Journal Article
Journal Info: Publisher: MDPI AG Country of Publication: Switzerland NLM ID: 101610216 Publication Model: Electronic Cited Medium: Print ISSN: 2079-4991 (Print) Linking ISSN: 20794991 NLM ISO Abbreviation: Nanomaterials (Basel) Subsets: PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: Nanoscale Titanium Oxide Memristive Structures for Neuromorphic Applications: Atomic Force Anodization Techniques, Modeling, Chemical Composition, and Resistive Switching Properties.
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  Data: <searchLink fieldCode="AU" term="%22Avilov+VI%22">Avilov VI</searchLink>; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.<br /><searchLink fieldCode="AU" term="%22Tominov+RV%22">Tominov RV</searchLink>; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.; Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.<br /><searchLink fieldCode="AU" term="%22Vakulov+ZE%22">Vakulov ZE</searchLink>; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.<br /><searchLink fieldCode="AU" term="%22Rodriguez+DJ%22">Rodriguez DJ</searchLink>; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.<br /><searchLink fieldCode="AU" term="%22Polupanov+NV%22">Polupanov NV</searchLink>; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.; Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.<br /><searchLink fieldCode="AU" term="%22Smirnov+VA%22">Smirnov VA</searchLink>; Research Laboratory Neuroelectronics and Memristive Nanomaterials (NEUROMENA Lab), Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.; Department of Radioelectronics and Nanoelectronics, Institute of Nanotechnologies, Electronics and Electronic Equipment Engineering, Southern Federal University, Taganrog 347922, Russia.
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  Data: <searchLink fieldCode="JN" term="%22101610216%22">Nanomaterials (Basel, Switzerland)</searchLink> [Nanomaterials (Basel)] 2025 Jan 06; Vol. 15 (1). <i>Date of Electronic Publication: </i>2025 Jan 06.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22MDPI+AG%22">MDPI AG </searchLink><i>Country of Publication: </i>Switzerland <i>NLM ID: </i>101610216 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Print <i>ISSN: </i>2079-4991 (Print) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220794991%22">20794991 </searchLink><i>NLM ISO Abbreviation: </i>Nanomaterials (Basel) <i>Subsets: </i>PubMed not MEDLINE
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        Value: 10.3390/nano15010075
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        Text: English
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      – TitleFull: Nanoscale Titanium Oxide Memristive Structures for Neuromorphic Applications: Atomic Force Anodization Techniques, Modeling, Chemical Composition, and Resistive Switching Properties.
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              Text: 2025 Jan 06
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