Toward high-current-density and high-frequency graphene resonant tunneling transistors.

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Title: Toward high-current-density and high-frequency graphene resonant tunneling transistors.
Authors: Zhang Z; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China., Zhang B; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China., Zhang Y; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Wang Y; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Hays P; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA., Tongay SA; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA., Wang M; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Han H; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Li H; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Zhang J; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China. Jiawei.Zhang@sdu.edu.cn., Song A; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China. songam@sustech.edu.cn.; Department of Electrical and Electronic Engineering, University of Manchester, Manchester, UK. songam@sustech.edu.cn.
Source: Nature communications [Nat Commun] 2025 May 23; Vol. 16 (1), pp. 4805. Date of Electronic Publication: 2025 May 23.
Publication Type: Journal Article
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE
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  Data: Toward high-current-density and high-frequency graphene resonant tunneling transistors.
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  Data: <searchLink fieldCode="AU" term="%22Zhang+Z%22">Zhang Z</searchLink>; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China.<br /><searchLink fieldCode="AU" term="%22Zhang+B%22">Zhang B</searchLink>; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China.<br /><searchLink fieldCode="AU" term="%22Zhang+Y%22">Zhang Y</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Wang+Y%22">Wang Y</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Hays+P%22">Hays P</searchLink>; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA.<br /><searchLink fieldCode="AU" term="%22Tongay+SA%22">Tongay SA</searchLink>; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA.<br /><searchLink fieldCode="AU" term="%22Wang+M%22">Wang M</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Han+H%22">Han H</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Li+H%22">Li H</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Zhang+J%22">Zhang J</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China. Jiawei.Zhang@sdu.edu.cn.<br /><searchLink fieldCode="AU" term="%22Song+A%22">Song A</searchLink>; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China. songam@sustech.edu.cn.; Department of Electrical and Electronic Engineering, University of Manchester, Manchester, UK. songam@sustech.edu.cn.
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  Data: <searchLink fieldCode="JN" term="%22101528555%22">Nature communications</searchLink> [Nat Commun] 2025 May 23; Vol. 16 (1), pp. 4805. <i>Date of Electronic Publication: </i>2025 May 23.
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              Text: 2025 May 23
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