Toward high-current-density and high-frequency graphene resonant tunneling transistors.
Saved in:
| Title: | Toward high-current-density and high-frequency graphene resonant tunneling transistors. |
|---|---|
| Authors: | Zhang Z; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China., Zhang B; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China., Zhang Y; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Wang Y; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Hays P; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA., Tongay SA; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA., Wang M; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Han H; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Li H; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China., Zhang J; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China. Jiawei.Zhang@sdu.edu.cn., Song A; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China. songam@sustech.edu.cn.; Department of Electrical and Electronic Engineering, University of Manchester, Manchester, UK. songam@sustech.edu.cn. |
| Source: | Nature communications [Nat Commun] 2025 May 23; Vol. 16 (1), pp. 4805. Date of Electronic Publication: 2025 May 23. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
|
Full text is not displayed to guests.
Login for full access.
|
|
| FullText | Links: – Type: pdflink Text: Availability: 1 |
|---|---|
| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 40410158 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
| IllustrationInfo | |
| Items | – Name: Title Label: Title Group: Ti Data: Toward high-current-density and high-frequency graphene resonant tunneling transistors. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Zhang+Z%22">Zhang Z</searchLink>; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China.<br /><searchLink fieldCode="AU" term="%22Zhang+B%22">Zhang B</searchLink>; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China.<br /><searchLink fieldCode="AU" term="%22Zhang+Y%22">Zhang Y</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Wang+Y%22">Wang Y</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Hays+P%22">Hays P</searchLink>; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA.<br /><searchLink fieldCode="AU" term="%22Tongay+SA%22">Tongay SA</searchLink>; School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, USA.<br /><searchLink fieldCode="AU" term="%22Wang+M%22">Wang M</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Han+H%22">Han H</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Li+H%22">Li H</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China.<br /><searchLink fieldCode="AU" term="%22Zhang+J%22">Zhang J</searchLink>; Shandong Technology Center of Nanodevices and Integration, School of Integrated Circuits, Shandong University, Jinan, China. Jiawei.Zhang@sdu.edu.cn.<br /><searchLink fieldCode="AU" term="%22Song+A%22">Song A</searchLink>; Institute of Nanoscience and Applications, Southern University of Science and Technology, Shenzhen, China. songam@sustech.edu.cn.; Department of Electrical and Electronic Engineering, University of Manchester, Manchester, UK. songam@sustech.edu.cn. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101528555%22">Nature communications</searchLink> [Nat Commun] 2025 May 23; Vol. 16 (1), pp. 4805. <i>Date of Electronic Publication: </i>2025 May 23. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Pub%2E+Group%22">Nature Pub. Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101528555 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2041-1723 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220411723%22">20411723 </searchLink><i>NLM ISO Abbreviation: </i>Nat Commun <i>Subsets: </i>MEDLINE; PubMed not MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=40410158 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1038/s41467-025-58720-7 Languages: – Code: eng Text: English PhysicalDescription: Pagination: StartPage: 4805 Titles: – TitleFull: Toward high-current-density and high-frequency graphene resonant tunneling transistors. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Zhang Z – PersonEntity: Name: NameFull: Zhang B – PersonEntity: Name: NameFull: Zhang Y – PersonEntity: Name: NameFull: Wang Y – PersonEntity: Name: NameFull: Hays P – PersonEntity: Name: NameFull: Tongay SA – PersonEntity: Name: NameFull: Wang M – PersonEntity: Name: NameFull: Han H – PersonEntity: Name: NameFull: Li H – PersonEntity: Name: NameFull: Zhang J – PersonEntity: Name: NameFull: Song A IsPartOfRelationships: – BibEntity: Dates: – D: 23 M: 05 Text: 2025 May 23 Type: published Y: 2025 Identifiers: – Type: issn-electronic Value: 2041-1723 Numbering: – Type: volume Value: 16 – Type: issue Value: 1 Titles: – TitleFull: Nature communications Type: main |
| ResultId | 1 |