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Overcoming Secondary Nucleation of Misoriented Domains during Wafer-Scale Epitaxy of Single-Crystal Graphene on Ge(110).

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Title: Overcoming Secondary Nucleation of Misoriented Domains during Wafer-Scale Epitaxy of Single-Crystal Graphene on Ge(110).
Authors: Jacobberger RM; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.; Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Miao Z; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China., Yu KM; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China., Lam YH; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China., Li Z; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., He Y; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Wang J; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Su KA; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Pathaare Y; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Saraswat V; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Rhodes DA; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Lagally MG; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Altman MS; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China., Arnold MS; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
Source: ACS nano [ACS Nano] 2025 Jun 10; Vol. 19 (22), pp. 21046-21056. Date of Electronic Publication: 2025 May 29.
Publication Type: Journal Article
Journal Info: Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE
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  Data: <searchLink fieldCode="AU" term="%22Jacobberger+RM%22">Jacobberger RM</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.; Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Miao+Z%22">Miao Z</searchLink>; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.<br /><searchLink fieldCode="AU" term="%22Yu+KM%22">Yu KM</searchLink>; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.<br /><searchLink fieldCode="AU" term="%22Lam+YH%22">Lam YH</searchLink>; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.<br /><searchLink fieldCode="AU" term="%22Li+Z%22">Li Z</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22He+Y%22">He Y</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Wang+J%22">Wang J</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Su+KA%22">Su KA</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Pathaare+Y%22">Pathaare Y</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Saraswat+V%22">Saraswat V</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Rhodes+DA%22">Rhodes DA</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Lagally+MG%22">Lagally MG</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.<br /><searchLink fieldCode="AU" term="%22Altman+MS%22">Altman MS</searchLink>; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China.<br /><searchLink fieldCode="AU" term="%22Arnold+MS%22">Arnold MS</searchLink>; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.
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