Overcoming Secondary Nucleation of Misoriented Domains during Wafer-Scale Epitaxy of Single-Crystal Graphene on Ge(110).
Saved in:
| Title: | Overcoming Secondary Nucleation of Misoriented Domains during Wafer-Scale Epitaxy of Single-Crystal Graphene on Ge(110). |
|---|---|
| Authors: | Jacobberger RM; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.; Department of Electrical and Computer Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Miao Z; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China., Yu KM; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China., Lam YH; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China., Li Z; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., He Y; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Wang J; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Su KA; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Pathaare Y; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Saraswat V; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Rhodes DA; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States.; Department of Physics, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Lagally MG; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States., Altman MS; Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China., Arnold MS; Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States. |
| Source: | ACS nano [ACS Nano] 2025 Jun 10; Vol. 19 (22), pp. 21046-21056. Date of Electronic Publication: 2025 May 29. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: American Chemical Society Country of Publication: United States NLM ID: 101313589 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1936-086X (Electronic) Linking ISSN: 19360851 NLM ISO Abbreviation: ACS Nano Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
Be the first to leave a comment!
