Doping with phosphorus reduces anion vacancy disorder in CdSeTe semiconductors enabling higher solar cell efficiency.
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| Title: | Doping with phosphorus reduces anion vacancy disorder in CdSeTe semiconductors enabling higher solar cell efficiency. |
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| Authors: | Kuciauskas D; Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, USA. Darius.Kuciauskas@nrel.gov., Nardone M; Department of Physics, Bowling Green State University, Bowling Green, OH, USA., Ščajev P; Institute of Photonics and Nanotechnology, Faculty of Physics, Vilnius University, Vilnius, Lithuania., Jiang CS; Materials Science Center, National Renewable Energy Laboratory, Golden, CO, USA., Lu D; California Technology Center, First Solar, Santa Clara, California, CA, USA., Farshchi R; California Technology Center, First Solar, Santa Clara, California, CA, USA. |
| Source: | Nature communications [Nat Commun] 2025 Sep 25; Vol. 16 (1), pp. 8378. Date of Electronic Publication: 2025 Sep 25. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101528555 Publication Model: Electronic Cited Medium: Internet ISSN: 2041-1723 (Electronic) Linking ISSN: 20411723 NLM ISO Abbreviation: Nat Commun Subsets: MEDLINE; PubMed not MEDLINE |
| Database: | MEDLINE Ultimate |
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