High-density conductance states and synaptic plasticity in SnP2S6 memristors for neuromorphic computing.

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Title: High-density conductance states and synaptic plasticity in SnP2S6 memristors for neuromorphic computing.
Authors: Tun TTT; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore. eleakw@nus.edu.sg., Huo J; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore. eleakw@nus.edu.sg., Ang KW; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore. eleakw@nus.edu.sg.
Source: Nanoscale horizons [Nanoscale Horiz] 2026 Feb 02; Vol. 11 (2), pp. 555-564. Date of Electronic Publication: 2026 Feb 02.
Publication Type: Journal Article
Journal Info: Publisher: Royal Society of Chemistry Country of Publication: England NLM ID: 101712576 Publication Model: Electronic Cited Medium: Internet ISSN: 2055-6764 (Electronic) Linking ISSN: 20556756 NLM ISO Abbreviation: Nanoscale Horiz Subsets: MEDLINE; PubMed not MEDLINE
Database: MEDLINE Ultimate
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  Data: High-density conductance states and synaptic plasticity in SnP<subscript>2</subscript>S<subscript>6</subscript> memristors for neuromorphic computing.
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  Data: <searchLink fieldCode="AU" term="%22Tun+TTT%22">Tun TTT</searchLink>; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore. eleakw@nus.edu.sg.<br /><searchLink fieldCode="AU" term="%22Huo+J%22">Huo J</searchLink>; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore. eleakw@nus.edu.sg.<br /><searchLink fieldCode="AU" term="%22Ang+KW%22">Ang KW</searchLink>; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117583, Singapore. eleakw@nus.edu.sg.
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  Data: <searchLink fieldCode="JN" term="%22101712576%22">Nanoscale horizons</searchLink> [Nanoscale Horiz] 2026 Feb 02; Vol. 11 (2), pp. 555-564. <i>Date of Electronic Publication: </i>2026 Feb 02.
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  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Royal+Society+of+Chemistry%22">Royal Society of Chemistry </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101712576 <i>Publication Model: </i>Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>2055-6764 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2220556756%22">20556756 </searchLink><i>NLM ISO Abbreviation: </i>Nanoscale Horiz <i>Subsets: </i>MEDLINE; PubMed not MEDLINE
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      – Type: doi
        Value: 10.1039/d5nh00675a
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      – Code: eng
        Text: English
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        StartPage: 555
    Titles:
      – TitleFull: High-density conductance states and synaptic plasticity in SnP2S6 memristors for neuromorphic computing.
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            NameFull: Tun TTT
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            NameFull: Huo J
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            NameFull: Ang KW
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            – D: 02
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              Text: 2026 Feb 02
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              Y: 2026
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              Value: 2055-6764
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