APA (7th ed.) Citation

F, G., I, S., M, P., A, P., R, P., T, M., & E, B. (2026). Orbital-selective band engineering realizes high zT in p-type Ru2Ti1-xHfxSi full-Heusler thermoelectrics. Nature communications, 17(1), . https://doi.org/10.1038/s41467-026-69799-x

Chicago Style (17th ed.) Citation

F, Garmroudi, Serhiienko I, Parzer M, Pustogow A, Podloucky R, Mori T, and Bauer E. "Orbital-selective Band Engineering Realizes High ZT in P-type Ru2Ti1-xHfxSi Full-Heusler Thermoelectrics." Nature Communications 17, no. 1 (2026). https://doi.org/10.1038/s41467-026-69799-x.

MLA (9th ed.) Citation

F, Garmroudi, et al. "Orbital-selective Band Engineering Realizes High ZT in P-type Ru2Ti1-xHfxSi Full-Heusler Thermoelectrics." Nature Communications, vol. 17, no. 1, 2026, https://doi.org/10.1038/s41467-026-69799-x.