Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.

Saved in:
Bibliographic Details
Title: Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.
Authors: Peña T; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. tara.pena@stanford.edu., Persson AEO; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. anton.persson@chalmers.se.; Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden. anton.persson@chalmers.se., Krayev A; HORIBA Scientific, Novato, CA, USA., Friðriksdóttir Á; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Su H; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA., Lee YM; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Song YS; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Neilson K; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Zhang Z; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Hoang AT; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Yang JA; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Hoang L; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Wang SX; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA., Mannix AJ; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA., McIntyre PC; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA., Pop E; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA. epop@stanford.edu.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Applied Physics, Stanford University, Stanford, CA, USA. epop@stanford.edu.
Source: Nature nanotechnology [Nat Nanotechnol] 2026 Jun 02. Date of Electronic Publication: 2026 Jun 02.
Publication Type: Journal Article
Journal Info: Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101283273 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1748-3395 (Electronic) Linking ISSN: 17483387 NLM ISO Abbreviation: Nat Nanotechnol Subsets: MEDLINE
Database: MEDLINE Ultimate
FullText Text:
  Availability: 0
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 42230814
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Peña+T%22">Peña T</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. tara.pena@stanford.edu.<br /><searchLink fieldCode="AU" term="%22Persson+AEO%22">Persson AEO</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. anton.persson@chalmers.se.; Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden. anton.persson@chalmers.se.<br /><searchLink fieldCode="AU" term="%22Krayev+A%22">Krayev A</searchLink>; HORIBA Scientific, Novato, CA, USA.<br /><searchLink fieldCode="AU" term="%22Friðriksdóttir+Á%22">Friðriksdóttir Á</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Su+H%22">Su H</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Lee+YM%22">Lee YM</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Song+YS%22">Song YS</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Neilson+K%22">Neilson K</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Zhang+Z%22">Zhang Z</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Hoang+AT%22">Hoang AT</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Yang+JA%22">Yang JA</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Hoang+L%22">Hoang L</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Wang+SX%22">Wang SX</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Mannix+AJ%22">Mannix AJ</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.<br /><searchLink fieldCode="AU" term="%22McIntyre+PC%22">McIntyre PC</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Pop+E%22">Pop E</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA. epop@stanford.edu.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Applied Physics, Stanford University, Stanford, CA, USA. epop@stanford.edu.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22101283273%22">Nature nanotechnology</searchLink> [Nat Nanotechnol] 2026 Jun 02. <i>Date of Electronic Publication: </i>2026 Jun 02.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Pub%2E+Group%22">Nature Pub. Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101283273 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1748-3395 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2217483387%22">17483387 </searchLink><i>NLM ISO Abbreviation: </i>Nat Nanotechnol <i>Subsets: </i>MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=42230814
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1038/s41565-026-02161-w
    Languages:
      – Code: eng
        Text: English
    Titles:
      – TitleFull: Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Peña T
      – PersonEntity:
          Name:
            NameFull: Persson AEO
      – PersonEntity:
          Name:
            NameFull: Krayev A
      – PersonEntity:
          Name:
            NameFull: Friðriksdóttir Á
      – PersonEntity:
          Name:
            NameFull: Su H
      – PersonEntity:
          Name:
            NameFull: Lee YM
      – PersonEntity:
          Name:
            NameFull: Song YS
      – PersonEntity:
          Name:
            NameFull: Neilson K
      – PersonEntity:
          Name:
            NameFull: Zhang Z
      – PersonEntity:
          Name:
            NameFull: Hoang AT
      – PersonEntity:
          Name:
            NameFull: Yang JA
      – PersonEntity:
          Name:
            NameFull: Hoang L
      – PersonEntity:
          Name:
            NameFull: Wang SX
      – PersonEntity:
          Name:
            NameFull: Mannix AJ
      – PersonEntity:
          Name:
            NameFull: McIntyre PC
      – PersonEntity:
          Name:
            NameFull: Pop E
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 02
              M: 06
              Text: 2026 Jun 02
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-electronic
              Value: 1748-3395
          Titles:
            – TitleFull: Nature nanotechnology
              Type: main
ResultId 1