Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.
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| Title: | Scaling nanoribbon transistors with monolayer transition metal dichalcogenides. |
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| Authors: | Peña T; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. tara.pena@stanford.edu., Persson AEO; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. anton.persson@chalmers.se.; Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden. anton.persson@chalmers.se., Krayev A; HORIBA Scientific, Novato, CA, USA., Friðriksdóttir Á; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Su H; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA., Lee YM; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Song YS; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Neilson K; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Zhang Z; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Hoang AT; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Yang JA; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Hoang L; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Wang SX; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA., Mannix AJ; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA., McIntyre PC; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA., Pop E; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA. epop@stanford.edu.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Applied Physics, Stanford University, Stanford, CA, USA. epop@stanford.edu. |
| Source: | Nature nanotechnology [Nat Nanotechnol] 2026 Jun 02. Date of Electronic Publication: 2026 Jun 02. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101283273 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1748-3395 (Electronic) Linking ISSN: 17483387 NLM ISO Abbreviation: Nat Nanotechnol Subsets: MEDLINE |
| Database: | MEDLINE Ultimate |
| FullText | Text: Availability: 0 |
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| Header | DbId: mdl DbLabel: MEDLINE Ultimate An: 42230814 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Scaling nanoribbon transistors with monolayer transition metal dichalcogenides. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Peña+T%22">Peña T</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. tara.pena@stanford.edu.<br /><searchLink fieldCode="AU" term="%22Persson+AEO%22">Persson AEO</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. anton.persson@chalmers.se.; Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden. anton.persson@chalmers.se.<br /><searchLink fieldCode="AU" term="%22Krayev+A%22">Krayev A</searchLink>; HORIBA Scientific, Novato, CA, USA.<br /><searchLink fieldCode="AU" term="%22Friðriksdóttir+Á%22">Friðriksdóttir Á</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Su+H%22">Su H</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Lee+YM%22">Lee YM</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Song+YS%22">Song YS</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Neilson+K%22">Neilson K</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Zhang+Z%22">Zhang Z</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Hoang+AT%22">Hoang AT</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Yang+JA%22">Yang JA</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Hoang+L%22">Hoang L</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Wang+SX%22">Wang SX</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Mannix+AJ%22">Mannix AJ</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA.<br /><searchLink fieldCode="AU" term="%22McIntyre+PC%22">McIntyre PC</searchLink>; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA.<br /><searchLink fieldCode="AU" term="%22Pop+E%22">Pop E</searchLink>; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA. epop@stanford.edu.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Applied Physics, Stanford University, Stanford, CA, USA. epop@stanford.edu. – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22101283273%22">Nature nanotechnology</searchLink> [Nat Nanotechnol] 2026 Jun 02. <i>Date of Electronic Publication: </i>2026 Jun 02. – Name: TypePub Label: Publication Type Group: TypPub Data: Journal Article – Name: TitleSource Label: Journal Info Group: Src Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Nature+Pub%2E+Group%22">Nature Pub. Group </searchLink><i>Country of Publication: </i>England <i>NLM ID: </i>101283273 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1748-3395 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2217483387%22">17483387 </searchLink><i>NLM ISO Abbreviation: </i>Nat Nanotechnol <i>Subsets: </i>MEDLINE |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=42230814 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1038/s41565-026-02161-w Languages: – Code: eng Text: English Titles: – TitleFull: Scaling nanoribbon transistors with monolayer transition metal dichalcogenides. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Peña T – PersonEntity: Name: NameFull: Persson AEO – PersonEntity: Name: NameFull: Krayev A – PersonEntity: Name: NameFull: Friðriksdóttir Á – PersonEntity: Name: NameFull: Su H – PersonEntity: Name: NameFull: Lee YM – PersonEntity: Name: NameFull: Song YS – PersonEntity: Name: NameFull: Neilson K – PersonEntity: Name: NameFull: Zhang Z – PersonEntity: Name: NameFull: Hoang AT – PersonEntity: Name: NameFull: Yang JA – PersonEntity: Name: NameFull: Hoang L – PersonEntity: Name: NameFull: Wang SX – PersonEntity: Name: NameFull: Mannix AJ – PersonEntity: Name: NameFull: McIntyre PC – PersonEntity: Name: NameFull: Pop E IsPartOfRelationships: – BibEntity: Dates: – D: 02 M: 06 Text: 2026 Jun 02 Type: published Y: 2026 Identifiers: – Type: issn-electronic Value: 1748-3395 Titles: – TitleFull: Nature nanotechnology Type: main |
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