Scaling nanoribbon transistors with monolayer transition metal dichalcogenides.
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| Title: | Scaling nanoribbon transistors with monolayer transition metal dichalcogenides. |
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| Authors: | Peña T; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. tara.pena@stanford.edu., Persson AEO; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. anton.persson@chalmers.se.; Department of Microtechnology and Nanoscience, Chalmers University of Technology, Gothenburg, Sweden. anton.persson@chalmers.se., Krayev A; HORIBA Scientific, Novato, CA, USA., Friðriksdóttir Á; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Su H; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA., Lee YM; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Song YS; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Neilson K; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Zhang Z; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Hoang AT; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA., Yang JA; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Hoang L; Department of Electrical Engineering, Stanford University, Stanford, CA, USA., Wang SX; Department of Electrical Engineering, Stanford University, Stanford, CA, USA.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, CA, USA., Mannix AJ; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, CA, USA., McIntyre PC; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA., Pop E; Department of Electrical Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Materials Science & Engineering, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Stanford Synchrotron Radiation Lightsource (SSRL), SLAC National Accelerator Laboratory, Menlo Park, CA, USA. epop@stanford.edu.; Precourt Institute for Energy, Stanford University, Stanford, CA, USA. epop@stanford.edu.; Department of Applied Physics, Stanford University, Stanford, CA, USA. epop@stanford.edu. |
| Source: | Nature nanotechnology [Nat Nanotechnol] 2026 Jun 02. Date of Electronic Publication: 2026 Jun 02. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Nature Pub. Group Country of Publication: England NLM ID: 101283273 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1748-3395 (Electronic) Linking ISSN: 17483387 NLM ISO Abbreviation: Nat Nanotechnol Subsets: MEDLINE |
| Database: | MEDLINE Ultimate |
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