View in EDS

Integrative defect engineering and NiCo-layered double hydroxide decoration of W-doped BiVO4: a high-performance photoanode for efficient photoelectrochemical water splitting.

Saved in:
Bibliographic Details
Title: Integrative defect engineering and NiCo-layered double hydroxide decoration of W-doped BiVO4: a high-performance photoanode for efficient photoelectrochemical water splitting.
Authors: Billah MM; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan; Department of Chemistry, Comilla University, Cumilla 3506, Bangladesh., Islam MA; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan., Tsubota H; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan., Tan WK; Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan., Kumar R; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan., Muto H; Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan., Matsuda A; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan., Kawamura G; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan. Electronic address: kawamura.go.km@tut.jp.
Source: Journal of colloid and interface science [J Colloid Interface Sci] 2026 Jun 24; Vol. 724 (Pt 1), pp. 140998. Date of Electronic Publication: 2026 Jun 24.
Publication Type: Journal Article
Journal Info: Publisher: Academic Press Country of Publication: United States NLM ID: 0043125 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1095-7103 (Electronic) Linking ISSN: 00219797 NLM ISO Abbreviation: J Colloid Interface Sci Subsets: MEDLINE
Database: MEDLINE Ultimate
FullText Text:
  Availability: 0
Header DbId: mdl
DbLabel: MEDLINE Ultimate
An: 42364430
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
IllustrationInfo
Items – Name: Title
  Label: Title
  Group: Ti
  Data: Integrative defect engineering and NiCo-layered double hydroxide decoration of W-doped BiVO<subscript>4</subscript>: a high-performance photoanode for efficient photoelectrochemical water splitting.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Billah+MM%22">Billah MM</searchLink>; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan; Department of Chemistry, Comilla University, Cumilla 3506, Bangladesh.<br /><searchLink fieldCode="AU" term="%22Islam+MA%22">Islam MA</searchLink>; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan.<br /><searchLink fieldCode="AU" term="%22Tsubota+H%22">Tsubota H</searchLink>; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan.<br /><searchLink fieldCode="AU" term="%22Tan+WK%22">Tan WK</searchLink>; Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan.<br /><searchLink fieldCode="AU" term="%22Kumar+R%22">Kumar R</searchLink>; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan.<br /><searchLink fieldCode="AU" term="%22Muto+H%22">Muto H</searchLink>; Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan.<br /><searchLink fieldCode="AU" term="%22Matsuda+A%22">Matsuda A</searchLink>; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan.<br /><searchLink fieldCode="AU" term="%22Kawamura+G%22">Kawamura G</searchLink>; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan. Electronic address: kawamura.go.km@tut.jp.
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%220043125%22">Journal of colloid and interface science</searchLink> [J Colloid Interface Sci] 2026 Jun 24; Vol. 724 (Pt 1), pp. 140998. <i>Date of Electronic Publication: </i>2026 Jun 24.
– Name: TypePub
  Label: Publication Type
  Group: TypPub
  Data: Journal Article
– Name: TitleSource
  Label: Journal Info
  Group: Src
  Data: <i>Publisher: </i><searchLink fieldCode="PB" term="%22Academic+Press%22">Academic Press </searchLink><i>Country of Publication: </i>United States <i>NLM ID: </i>0043125 <i>Publication Model: </i>Print-Electronic <i>Cited Medium: </i>Internet <i>ISSN: </i>1095-7103 (Electronic) <i>Linking ISSN: </i><searchLink fieldCode="IS" term="%2200219797%22">00219797 </searchLink><i>NLM ISO Abbreviation: </i>J Colloid Interface Sci <i>Subsets: </i>MEDLINE
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=mdl&AN=42364430
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1016/j.jcis.2026.140998
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        StartPage: 140998
    Titles:
      – TitleFull: Integrative defect engineering and NiCo-layered double hydroxide decoration of W-doped BiVO4: a high-performance photoanode for efficient photoelectrochemical water splitting.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Billah MM
      – PersonEntity:
          Name:
            NameFull: Islam MA
      – PersonEntity:
          Name:
            NameFull: Tsubota H
      – PersonEntity:
          Name:
            NameFull: Tan WK
      – PersonEntity:
          Name:
            NameFull: Kumar R
      – PersonEntity:
          Name:
            NameFull: Muto H
      – PersonEntity:
          Name:
            NameFull: Matsuda A
      – PersonEntity:
          Name:
            NameFull: Kawamura G
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 24
              M: 06
              Text: 2026 Jun 24
              Type: published
              Y: 2026
          Identifiers:
            – Type: issn-electronic
              Value: 1095-7103
          Numbering:
            – Type: volume
              Value: 724
            – Type: issue
              Value: Pt 1
          Titles:
            – TitleFull: Journal of colloid and interface science
              Type: main
ResultId 1