Integrative defect engineering and NiCo-layered double hydroxide decoration of W-doped BiVO4: a high-performance photoanode for efficient photoelectrochemical water splitting.
Saved in:
| Title: | Integrative defect engineering and NiCo-layered double hydroxide decoration of W-doped BiVO |
|---|---|
| Authors: | Billah MM; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan; Department of Chemistry, Comilla University, Cumilla 3506, Bangladesh., Islam MA; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan., Tsubota H; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan., Tan WK; Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan., Kumar R; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan., Muto H; Institute of Liberal Arts and Sciences, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan., Matsuda A; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan., Kawamura G; Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology,1-1 Hibarigaoka, Tempaku-cho, Toyohashi 441-8580, Aichi, Japan; Institute for research on Next-Generation Semiconductor and Sensing Science, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, Aichi 441-8580, Japan. Electronic address: kawamura.go.km@tut.jp. |
| Source: | Journal of colloid and interface science [J Colloid Interface Sci] 2026 Jun 24; Vol. 724 (Pt 1), pp. 140998. Date of Electronic Publication: 2026 Jun 24. |
| Publication Type: | Journal Article |
| Journal Info: | Publisher: Academic Press Country of Publication: United States NLM ID: 0043125 Publication Model: Print-Electronic Cited Medium: Internet ISSN: 1095-7103 (Electronic) Linking ISSN: 00219797 NLM ISO Abbreviation: J Colloid Interface Sci Subsets: MEDLINE |
| Database: | MEDLINE Ultimate |
Be the first to leave a comment!
