Molecular Beam Epitaxy : A Short History

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Title: Molecular Beam Epitaxy : A Short History
Description: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
Authors: John Orton, Tom Foxon
Resource Type: eBook.
Subjects: Molecular beam epitaxy, Semiconductors--Design and construction, Thin films
Categories: SCIENCE / History
Database: eBook Collection (EBSCOhost)
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  – Type: ebook-pdf
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Header DbId: nlebk
DbLabel: eBook Collection (EBSCOhost)
An: 992814
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AccessLevel: 6
PubType: eBook
PubTypeId: ebook
PreciseRelevancyScore: 1063.91076660156
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  Data: Molecular Beam Epitaxy : A Short History
– Name: Abstract
  Label: Description
  Group: Ab
  Data: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.
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  Data: <searchLink fieldCode="AR" term="%22John+Orton%22">John Orton</searchLink><br /><searchLink fieldCode="AR" term="%22Tom+Foxon%22">Tom Foxon</searchLink>
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  Data: <searchLink fieldCode="DE" term="%22Molecular+beam+epitaxy%22">Molecular beam epitaxy</searchLink><br /><searchLink fieldCode="DE" term="%22Semiconductors--Design+and+construction%22">Semiconductors--Design and construction</searchLink><br /><searchLink fieldCode="DE" term="%22Thin+films%22">Thin films</searchLink>
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RecordInfo BibRecord:
  BibEntity:
    Classifications:
      – Code: 621.38152
        Scheme: ddc
        Type: prePub
    Languages:
      – Code: eng
        Text: English
    Subjects:
      – SubjectFull: Molecular beam epitaxy
        Type: general
      – SubjectFull: Semiconductors--Design and construction
        Type: general
      – SubjectFull: Thin films
        Type: general
    Titles:
      – TitleFull: Molecular Beam Epitaxy : A Short History
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: John Orton
      – PersonEntity:
          Name:
            NameFull: Tom Foxon
      – PersonEntity:
          Name:
            NameFull: John Orton
      – PersonEntity:
          Name:
            NameFull: Tom Foxon
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      – BibEntity:
          Dates:
            – D: 01
              M: 01
              Type: published
              Y: 2015
            – D: 19
              M: 05
              Type: profile
              Y: 2015
          Identifiers:
            – Type: isbn-print
              Value: 9780199695829
            – Type: isbn-electronic
              Value: 9780191061165
          Titles:
            – TitleFull: Molecular Beam Epitaxy : A Short History
              Type: main
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