Two-dimensional indium selenide wafers for integrated electronics.
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| Title: | Two-dimensional indium selenide wafers for integrated electronics. |
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| Authors: | Qin, Biao, Jiang, Jianfeng, Wang, Lu, Guo, Quanlin, Zhang, Chenxi, Xu, Lin, Ni, Xing, Yin, Peng, Peng, Lian-Mao, Wang, Enge, Ding, Feng, Qiu, Chenguang, Liu, Can, Liu, Kaihui |
| Source: | Science. 7/17/2025, Vol. 389 Issue 6757, p299-302. 4p. |
| Subjects: | Indium selenide, Semiconductor wafers, Stoichiometry, Boltzmann's constant, Transistors |
| Abstract: | Two-dimensional (2D) indium selenide, with its low effective mass, high thermal velocity, and exceptional electronic mobility, is a promising semiconductor for surpassing silicon electronics, but grown films have not achieved performance comparable with that of exfoliated micrometer-scale flakes. We report a solid‒liquid‒solid strategy that converts amorphous indium selenide films into pure-phase, high-crystallinity indium selenide wafers by creating an indium-rich liquid interface and maintaining a strict 1:1 stoichiometric ratio of indium to selenium. The as-obtained indium selenide films exhibit exceptional uniformity, a pure phase, and a high crystallinity across an entire ~5-centimeter wafer. Transistor arrays based on the produced indium selenide wafers demonstrate outstanding electronic performance surpassing that of all 2D film-based devices, including an extremely high mobility (averaging as high as 287 square centimeters per volt-second) and a near-Boltzmann-limit subthreshold swing (averaging as low as 67 millivolts per decade) at room temperature. Editor's summary: The electronic properties of indium selenide (InSe) can surpass silicon, but films of InSe are often inferior in performance because the material grows nonstoichiometrically. Qin et al. now report a solid–liquid–solid growth method to produce highly-crystallinity InSe wafers. The authors used a liquid indium seal around the wafer to create an indium-rich liquid interface that drives the transformation of amorphous InSe into crystalline InSe. Transistor array devices had extremely high mobility and a near Boltzmann-limit subthreshold swing, with an average value as low as 67 millivolts per decade. —Phil Szuromi [ABSTRACT FROM AUTHOR] |
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| Database: | Psychology and Behavioral Sciences Collection |
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