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Wafer-Scale Graphene Integrated Circuit.

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Title: Wafer-Scale Graphene Integrated Circuit.
Authors: Yu-Ming Lin, Vatdes-Garcia, Alberto, Shu-Jen Han, Farmer, Damon B., Meric, Inane, Yanning Sun, Yanqing Wu, Dimitrakopoulos, Christos, Grill, Alfred, Avouris, Phaedon, Jenkins, Keith A.
Source: Science (pre-March 2025). 6/10/2011, Vol. 332 Issue 6035, p1294-1297. 4p.
Subjects: Integrated circuits, Graphene, Silicon carbide, Technological innovations, Wafer-scale integration of circuits, Broadband communication systems, Radio frequency integrated circuits
Abstract: A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance. [ABSTRACT FROM AUTHOR]
Copyright of Science (pre-March 2025) is the property of American Association for the Advancement of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
Database: Psychology and Behavioral Sciences Collection
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  Data: Wafer-Scale Graphene Integrated Circuit.
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  Data: <searchLink fieldCode="JN" term="%22Science+%28pre-March+2025%29%22">Science (pre-March 2025)</searchLink>. 6/10/2011, Vol. 332 Issue 6035, p1294-1297. 4p.
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  Data: <searchLink fieldCode="DE" term="%22Integrated+circuits%22">Integrated circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Graphene%22">Graphene</searchLink><br /><searchLink fieldCode="DE" term="%22Silicon+carbide%22">Silicon carbide</searchLink><br /><searchLink fieldCode="DE" term="%22Technological+innovations%22">Technological innovations</searchLink><br /><searchLink fieldCode="DE" term="%22Wafer-scale+integration+of+circuits%22">Wafer-scale integration of circuits</searchLink><br /><searchLink fieldCode="DE" term="%22Broadband+communication+systems%22">Broadband communication systems</searchLink><br /><searchLink fieldCode="DE" term="%22Radio+frequency+integrated+circuits%22">Radio frequency integrated circuits</searchLink>
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  Data: A wafer-scale graphene circuit was demonstrated in which all circuit components, including graphene field-effect transistor and inductors, were monolithically integrated on a single silicon carbide wafer. The integrated circuit operates as a broadband radio-frequency mixer at frequencies up to 10 gigahertz. These graphene circuits exhibit outstanding thermal stability with little reduction in performance (less than 1 decibel) between 300 and 400 kelvin. These results open up possibilities of achieving practical graphene technology with more complex functionality and performance. [ABSTRACT FROM AUTHOR]
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  Data: <i>Copyright of Science (pre-March 2025) is the property of American Association for the Advancement of Science and its content may not be copied or emailed to multiple sites without the copyright holder's express written permission. Additionally, content may not be used with any artificial intelligence tools or machine learning technologies. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract.</i> (Copyright applies to all Abstracts.)
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              Text: 6/10/2011
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