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Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate.

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Bibliographic Details
Title: Trap state passivation improved hot-carrier instability by zirconium-doping in hafnium oxide in a nanoscale n-metal-oxide semiconductor-field effect transistors with high-k/metal gate.
Authors: Hsi-Wen Liu1, Ting-Chang Chang1,2, tcchang3708@gmail.com, Jyun-Yu Tsai1, Ching-En Chen3, Kuan-Ju Liu1, Ying-Hsin Lu1, Chien-Yu Lin4, Tseung-Yuen Tseng3, Cheng, Osbert5, Cheng-Tung Huang5, Yi-Han Ye5
Source: Applied Physics Letters; 4/25/2016, Vol. 108 Issue 17, p173504-1-173504-5, 5p, 1 Diagram, 4 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/1.4947439