Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices.

Saved in:
Bibliographic Details
Title: Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices.
Authors: Vyas, P. B.1, pbv130130@utdallas.edu, Naquin, C.2, Edwards, H.2, Lee, M.3, Vandenberghe, W. G.4, Fischetti, M. V.4, max.fischetti@utdallas.edu
Source: Journal of Applied Physics; 2017, Vol. 121 Issue 4, p1-10, 10p, 2 Diagrams, 8 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.4974469