APA (7th ed.) Citation

Vyas, P. B., Naquin, C., Edwards, H., Lee, M., Vandenberghe, W. G., & Fischetti, M. V. (2017). Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices. Journal of Applied Physics, 121(4), 1. https://doi.org/10.1063/1.4974469

Chicago Style (17th ed.) Citation

Vyas, P. B., C. Naquin, H. Edwards, M. Lee, W. G. Vandenberghe, and M. V. Fischetti. "Theoretical Simulation of Negative Differential Transconductance in Lateral Quantum Well NMOS Devices." Journal of Applied Physics 121, no. 4 (2017): 1. https://doi.org/10.1063/1.4974469.

MLA (9th ed.) Citation

Vyas, P. B., et al. "Theoretical Simulation of Negative Differential Transconductance in Lateral Quantum Well NMOS Devices." Journal of Applied Physics, vol. 121, no. 4, 2017, p. 1, https://doi.org/10.1063/1.4974469.