Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices.

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Title: Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices.
Authors: Vyas, P. B.1, pbv130130@utdallas.edu, Naquin, C.2, Edwards, H.2, Lee, M.3, Vandenberghe, W. G.4, Fischetti, M. V.4, max.fischetti@utdallas.edu
Source: Journal of Applied Physics; 2017, Vol. 121 Issue 4, p1-10, 10p, 2 Diagrams, 8 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 120915820
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PubType: Academic Journal
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  Data: Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices.
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  Data: <searchLink fieldCode="AU" term="%22Vyas%2C+P%2E+B%2E%22">Vyas, P. B.</searchLink><relatesTo>1</relatesTo>, <i>pbv130130@utdallas.edu</i><br /><searchLink fieldCode="AU" term="%22Naquin%2C+C%2E%22">Naquin, C.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Edwards%2C+H%2E%22">Edwards, H.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+M%2E%22">Lee, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Vandenberghe%2C+W%2E+G%2E%22">Vandenberghe, W. G.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Fischetti%2C+M%2E+V%2E%22">Fischetti, M. V.</searchLink><relatesTo>4</relatesTo>, <i>max.fischetti@utdallas.edu</i>
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PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=120915820
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        Value: 10.1063/1.4974469
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      – Code: eng
        Text: English
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      – TitleFull: Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices.
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            NameFull: Naquin, C.
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            NameFull: Lee, M.
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            NameFull: Vandenberghe, W. G.
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              Text: 2017
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