Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices.
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| Title: | Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices. |
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| Authors: | Vyas, P. B.1, pbv130130@utdallas.edu, Naquin, C.2, Edwards, H.2, Lee, M.3, Vandenberghe, W. G.4, Fischetti, M. V.4, max.fischetti@utdallas.edu |
| Source: | Journal of Applied Physics; 2017, Vol. 121 Issue 4, p1-10, 10p, 2 Diagrams, 8 Graphs |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 120915820 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| Items | – Name: Title Label: Title Group: Ti Data: Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices. – Name: Author Label: Authors Group: Au Data: <searchLink fieldCode="AU" term="%22Vyas%2C+P%2E+B%2E%22">Vyas, P. B.</searchLink><relatesTo>1</relatesTo>, <i>pbv130130@utdallas.edu</i><br /><searchLink fieldCode="AU" term="%22Naquin%2C+C%2E%22">Naquin, C.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Edwards%2C+H%2E%22">Edwards, H.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Lee%2C+M%2E%22">Lee, M.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Vandenberghe%2C+W%2E+G%2E%22">Vandenberghe, W. G.</searchLink><relatesTo>4</relatesTo><br /><searchLink fieldCode="AU" term="%22Fischetti%2C+M%2E+V%2E%22">Fischetti, M. V.</searchLink><relatesTo>4</relatesTo>, <i>max.fischetti@utdallas.edu</i> – Name: TitleSource Label: Source Group: Src Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 2017, Vol. 121 Issue 4, p1-10, 10p, 2 Diagrams, 8 Graphs |
| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=120915820 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1063/1.4974469 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 10 StartPage: 1 Titles: – TitleFull: Theoretical simulation of negative differential transconductance in lateral quantum well nMOS devices. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Vyas, P. B. – PersonEntity: Name: NameFull: Naquin, C. – PersonEntity: Name: NameFull: Edwards, H. – PersonEntity: Name: NameFull: Lee, M. – PersonEntity: Name: NameFull: Vandenberghe, W. G. – PersonEntity: Name: NameFull: Fischetti, M. V. IsPartOfRelationships: – BibEntity: Dates: – D: 28 M: 01 Text: 2017 Type: published Y: 2017 Identifiers: – Type: issn-print Value: 00218979 Numbering: – Type: volume Value: 121 – Type: issue Value: 4 Titles: – TitleFull: Journal of Applied Physics Type: main |
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