The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN.

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Bibliographic Details
Title: The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN.
Authors: Chichibu, S. F.1,2, chichibulab@yahoo.co.jp, Uedono, A.3, Kojima, K.1, Ikeda, H.4, Fujito, K.4, Takashima, S.5, Edo, M.5, Ueno, K.5, Ishibashi, S.6
Source: Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 13p, 2 Diagrams, 9 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00218979
DOI:10.1063/1.5012994