APA (7th ed.) Citation

Chichibu, S. F., Uedono, A., Kojima, K., Ikeda, H., Fujito, K., Takashima, S., . . . Ishibashi, S. (2018). The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN. Journal of Applied Physics, 123(16), N.PAG. https://doi.org/10.1063/1.5012994

Chicago Style (17th ed.) Citation

Chichibu, S. F., A. Uedono, K. Kojima, H. Ikeda, K. Fujito, S. Takashima, M. Edo, K. Ueno, and S. Ishibashi. "The Origins and Properties of Intrinsic Nonradiative Recombination Centers in Wide Bandgap GaN and AlGaN." Journal of Applied Physics 123, no. 16 (2018): N.PAG. https://doi.org/10.1063/1.5012994.

MLA (9th ed.) Citation

Chichibu, S. F., et al. "The Origins and Properties of Intrinsic Nonradiative Recombination Centers in Wide Bandgap GaN and AlGaN." Journal of Applied Physics, vol. 123, no. 16, 2018, p. N.PAG, https://doi.org/10.1063/1.5012994.