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The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN.

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Title: The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN.
Authors: Chichibu, S. F.1,2, chichibulab@yahoo.co.jp, Uedono, A.3, Kojima, K.1, Ikeda, H.4, Fujito, K.4, Takashima, S.5, Edo, M.5, Ueno, K.5, Ishibashi, S.6
Source: Journal of Applied Physics; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 13p, 2 Diagrams, 9 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 129382322
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN.
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  Data: <searchLink fieldCode="JN" term="%22Journal+of+Applied+Physics%22">Journal of Applied Physics</searchLink>; 2018, Vol. 123 Issue 16, pN.PAG-N.PAG, 13p, 2 Diagrams, 9 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=129382322
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      – Type: doi
        Value: 10.1063/1.5012994
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      – Code: eng
        Text: English
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      Pagination:
        PageCount: 13
        StartPage: N.PAG
    Titles:
      – TitleFull: The origins and properties of intrinsic nonradiative recombination centers in wide bandgap GaN and AlGaN.
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            NameFull: Uedono, A.
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              Text: 2018
              Type: published
              Y: 2018
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              Value: 123
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              Value: 16
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            – TitleFull: Journal of Applied Physics
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