Chang, K., Liao, J., Chang, T., Yeh, C., Lin, C., Jin, F., . . . Ye, Y. (2019). Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node. IEEE Electron Device Letters, 40(4), 498. https://doi.org/10.1109/LED.2019.2899630
Chicago Style (17th ed.) CitationChang, Kai-Chun, et al. "Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node." IEEE Electron Device Letters 40, no. 4 (2019): 498. https://doi.org/10.1109/LED.2019.2899630.
MLA (9th ed.) CitationChang, Kai-Chun, et al. "Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node." IEEE Electron Device Letters, vol. 40, no. 4, 2019, p. 498, https://doi.org/10.1109/LED.2019.2899630.