Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node.
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| Title: | Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node. |
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| Authors: | Chang, Kai-Chun1, Liao, Jih-Chien2, Chang, Ting-Chang1, tcchang3708@gmail.com, Yeh, Chien-Hung3, Lin, Chien-Yu3, Jin, Fu-Yuan1, Lin, Yu-Shan1, Ciou, Fong-Min1, Hung, Wei-Chun1, Lin, Yun-Hsuan1, Lien, Chen-Hsin2, Cheng, Osbert4, Huang, Cheng-Tung4, Ye, Yi-Han4 |
| Source: | IEEE Electron Device Letters; Apr2019, Vol. 40 Issue 4, p498-501, 4p |
| Database: | Applied Science & Technology Source |
| FullText | Text: Availability: 0 |
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| Header | DbId: aci DbLabel: Applied Science & Technology Source An: 135773308 AccessLevel: 2 PubType: Academic Journal PubTypeId: academicJournal PreciseRelevancyScore: 0 |
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| PLink | https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=135773308 |
| RecordInfo | BibRecord: BibEntity: Identifiers: – Type: doi Value: 10.1109/LED.2019.2899630 Languages: – Code: eng Text: English PhysicalDescription: Pagination: PageCount: 4 StartPage: 498 Titles: – TitleFull: Abnormal Relationship Between Hot Carrier Stress Degradation and Body Current in High-k Metal Gate in the 14-nm Node. Type: main BibRelationships: HasContributorRelationships: – PersonEntity: Name: NameFull: Chang, Kai-Chun – PersonEntity: Name: NameFull: Liao, Jih-Chien – PersonEntity: Name: NameFull: Chang, Ting-Chang – PersonEntity: Name: NameFull: Yeh, Chien-Hung – PersonEntity: Name: NameFull: Lin, Chien-Yu – PersonEntity: Name: NameFull: Jin, Fu-Yuan – PersonEntity: Name: NameFull: Lin, Yu-Shan – PersonEntity: Name: NameFull: Ciou, Fong-Min – PersonEntity: Name: NameFull: Hung, Wei-Chun – PersonEntity: Name: NameFull: Lin, Yun-Hsuan – PersonEntity: Name: NameFull: Lien, Chen-Hsin – PersonEntity: Name: NameFull: Cheng, Osbert – PersonEntity: Name: NameFull: Huang, Cheng-Tung – PersonEntity: Name: NameFull: Ye, Yi-Han IsPartOfRelationships: – BibEntity: Dates: – D: 01 M: 04 Text: Apr2019 Type: published Y: 2019 Identifiers: – Type: issn-print Value: 07413106 Numbering: – Type: volume Value: 40 – Type: issue Value: 4 Titles: – TitleFull: IEEE Electron Device Letters Type: main |
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