Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator.
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| Title: | Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator. |
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| Authors: | Verona, C.1, Benetti, M.2, Cannata, D.2, Ciccognani, W.3, Colangeli, S.3, Di Pietrantonio, F.2, Limiti, E.3, Marinelli, M.1, Verona-Rinati, G.1, gianluca.verona.rinati@uniroma2.it |
| Source: | IEEE Electron Device Letters; May2019, Vol. 40 Issue 5, p765-768, 4p |
| Database: | Applied Science & Technology Source |
| ISSN: | 07413106 |
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| DOI: | 10.1109/LED.2019.2903578 |
