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Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator.

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Title: Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator.
Authors: Verona, C.1, Benetti, M.2, Cannata, D.2, Ciccognani, W.3, Colangeli, S.3, Di Pietrantonio, F.2, Limiti, E.3, Marinelli, M.1, Verona-Rinati, G.1, gianluca.verona.rinati@uniroma2.it
Source: IEEE Electron Device Letters; May2019, Vol. 40 Issue 5, p765-768, 4p
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 136117348
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PubType: Academic Journal
PubTypeId: academicJournal
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Items – Name: Title
  Label: Title
  Group: Ti
  Data: Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator.
– Name: Author
  Label: Authors
  Group: Au
  Data: <searchLink fieldCode="AU" term="%22Verona%2C+C%2E%22">Verona, C.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Benetti%2C+M%2E%22">Benetti, M.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Cannata%2C+D%2E%22">Cannata, D.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Ciccognani%2C+W%2E%22">Ciccognani, W.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Colangeli%2C+S%2E%22">Colangeli, S.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Di+Pietrantonio%2C+F%2E%22">Di Pietrantonio, F.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Limiti%2C+E%2E%22">Limiti, E.</searchLink><relatesTo>3</relatesTo><br /><searchLink fieldCode="AU" term="%22Marinelli%2C+M%2E%22">Marinelli, M.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Verona-Rinati%2C+G%2E%22">Verona-Rinati, G.</searchLink><relatesTo>1</relatesTo>, <i>gianluca.verona.rinati@uniroma2.it</i>
– Name: TitleSource
  Label: Source
  Group: Src
  Data: <searchLink fieldCode="JN" term="%22IEEE+Electron+Device+Letters%22">IEEE Electron Device Letters</searchLink>; May2019, Vol. 40 Issue 5, p765-768, 4p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=136117348
RecordInfo BibRecord:
  BibEntity:
    Identifiers:
      – Type: doi
        Value: 10.1109/LED.2019.2903578
    Languages:
      – Code: eng
        Text: English
    PhysicalDescription:
      Pagination:
        PageCount: 4
        StartPage: 765
    Titles:
      – TitleFull: Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator.
        Type: main
  BibRelationships:
    HasContributorRelationships:
      – PersonEntity:
          Name:
            NameFull: Verona, C.
      – PersonEntity:
          Name:
            NameFull: Benetti, M.
      – PersonEntity:
          Name:
            NameFull: Cannata, D.
      – PersonEntity:
          Name:
            NameFull: Ciccognani, W.
      – PersonEntity:
          Name:
            NameFull: Colangeli, S.
      – PersonEntity:
          Name:
            NameFull: Di Pietrantonio, F.
      – PersonEntity:
          Name:
            NameFull: Limiti, E.
      – PersonEntity:
          Name:
            NameFull: Marinelli, M.
      – PersonEntity:
          Name:
            NameFull: Verona-Rinati, G.
    IsPartOfRelationships:
      – BibEntity:
          Dates:
            – D: 01
              M: 05
              Text: May2019
              Type: published
              Y: 2019
          Identifiers:
            – Type: issn-print
              Value: 07413106
          Numbering:
            – Type: volume
              Value: 40
            – Type: issue
              Value: 5
          Titles:
            – TitleFull: IEEE Electron Device Letters
              Type: main
ResultId 1