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Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator.

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Bibliographic Details
Title: Stability of H-Terminated Diamond MOSFETs With V2O5/Al2O3 as Gate Insulator.
Authors: Verona, C.1, Benetti, M.2, Cannata, D.2, Ciccognani, W.3, Colangeli, S.3, Di Pietrantonio, F.2, Limiti, E.3, Marinelli, M.1, Verona-Rinati, G.1, gianluca.verona.rinati@uniroma2.it
Source: IEEE Electron Device Letters; May2019, Vol. 40 Issue 5, p765-768, 4p
Database: Applied Science & Technology Source
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