Strain measurement of a channel between Si/Ge stressors in a tri-gate field effect transistor utilizing moiré fringes in scanning transmission microscope images.
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| Title: | Strain measurement of a channel between Si/Ge stressors in a tri-gate field effect transistor utilizing moiré fringes in scanning transmission microscope images. |
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| Authors: | Kondo, Y.1, kondo@jeol.co.jp, Aoyama, Y.1, Hashiguchi, H.1, Lin, C. C.2, Hsu, K.2, Endo, N.1, Asayama, K.1, Fukunaga, K-I.1 |
| Source: | Applied Physics Letters; 4/29/2019, Vol. 114 Issue 17, pN.PAG-N.PAG, 5p, 4 Diagrams |
| Database: | Applied Science & Technology Source |
| ISSN: | 00036951 |
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| DOI: | 10.1063/1.5084161 |
