Bibliographic Details
| Title: |
Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations. |
| Authors: |
Matsumoto, Tsubasa1, t-matsumoto@se.kanazawa-u.ac.jp, Kato, Hiromitsu2, Makino, Toshiharu2, Ogura, Masahiko2, Takeuchi, Daisuke2, Yamasaki, Satoshi1,2, Inokuma, Takao3, Tokuda, Norio1,2 |
| Source: |
Applied Physics Letters; 6/17/2019, Vol. 114 Issue 24, pN.PAG-N.PAG, 4p, 1 Color Photograph, 5 Graphs |
| Database: |
Applied Science & Technology Source |
