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Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations.

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Title: Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations.
Authors: Matsumoto, Tsubasa1, t-matsumoto@se.kanazawa-u.ac.jp, Kato, Hiromitsu2, Makino, Toshiharu2, Ogura, Masahiko2, Takeuchi, Daisuke2, Yamasaki, Satoshi1,2, Inokuma, Takao3, Tokuda, Norio1,2
Source: Applied Physics Letters; 6/17/2019, Vol. 114 Issue 24, pN.PAG-N.PAG, 4p, 1 Color Photograph, 5 Graphs
Database: Applied Science & Technology Source
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Header DbId: aci
DbLabel: Applied Science & Technology Source
An: 137129014
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
PreciseRelevancyScore: 0
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  Data: Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations.
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  Data: <searchLink fieldCode="JN" term="%22Applied+Physics+Letters%22">Applied Physics Letters</searchLink>; 6/17/2019, Vol. 114 Issue 24, pN.PAG-N.PAG, 4p, 1 Color Photograph, 5 Graphs
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=137129014
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        Value: 10.1063/1.5100328
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      – Code: eng
        Text: English
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        PageCount: 4
        StartPage: N.PAG
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      – TitleFull: Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations.
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              M: 06
              Text: 6/17/2019
              Type: published
              Y: 2019
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