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Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations.

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Bibliographic Details
Title: Inversion channel mobility and interface state density of diamond MOSFET using N-type body with various phosphorus concentrations.
Authors: Matsumoto, Tsubasa1, t-matsumoto@se.kanazawa-u.ac.jp, Kato, Hiromitsu2, Makino, Toshiharu2, Ogura, Masahiko2, Takeuchi, Daisuke2, Yamasaki, Satoshi1,2, Inokuma, Takao3, Tokuda, Norio1,2
Source: Applied Physics Letters; 6/17/2019, Vol. 114 Issue 24, pN.PAG-N.PAG, 4p, 1 Color Photograph, 5 Graphs
Database: Applied Science & Technology Source
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