Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices.

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Bibliographic Details
Title: Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices.
Authors: Lin, Yun-Hsuan1, Chen, Wen-Chung2, Chen, Po-Hsun3, Lin, Chih-Yang1, Chang, Kai-Chun1, Chang, Yen-Cheng1, Yeh, Chien-Hung4, Lin, Chein-Yu4, Jin, Fu-Yuan1, Chen, Kuan-Hsu1, Kuo, Ting-Tzu4, Hung, Wei-Chieh1, Lee, Ya-Huan1, Lin, Jia-Hong1, Chang, Ting-Chang5, tcchang@mail.phys.nsysu.edu.tw
Source: Applied Physics Letters; 7/13/2020, Vol. 117 Issue 2, p1-4, 4p, 1 Diagram, 4 Graphs
Database: Applied Science & Technology Source
Description
ISSN:00036951
DOI:10.1063/5.0012679