APA (7th ed.) Citation

Lin, Y., Chen, W., Chen, P., Lin, C., Chang, K., Chang, Y., . . . Chang, T. (2020). Effect of deposition temperature on electrical properties of one-transistor-one-capacitor (1T1C) FeRAM devices. Applied Physics Letters, 117(2), 1. https://doi.org/10.1063/5.0012679

Chicago Style (17th ed.) Citation

Lin, Yun-Hsuan, et al. "Effect of Deposition Temperature on Electrical Properties of One-transistor-one-capacitor (1T1C) FeRAM Devices." Applied Physics Letters 117, no. 2 (2020): 1. https://doi.org/10.1063/5.0012679.

MLA (9th ed.) Citation

Lin, Yun-Hsuan, et al. "Effect of Deposition Temperature on Electrical Properties of One-transistor-one-capacitor (1T1C) FeRAM Devices." Applied Physics Letters, vol. 117, no. 2, 2020, p. 1, https://doi.org/10.1063/5.0012679.