Sol–gel derived BST (BaxSr1−xTiO3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure.
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| Title: | Sol–gel derived BST (BaxSr1−xTiO3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure. |
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| Authors: | Debnath, Ajit1, Srivastava, Vibhu1, Singh, Sanjai1, Sunny1, sunnymeharwal@gmail.com |
| Source: | Applied Nanoscience; Dec2020, Vol. 10 Issue 12, p5511-5521, 11p |
| Database: | Applied Science & Technology Source |
| ISSN: | 21905509 |
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| DOI: | 10.1007/s13204-020-01481-0 |
