APA (7th ed.) Citation

Debnath, A., Srivastava, V., Singh, S., & Sunny. (2020). Sol–gel derived BST (BaxSr1−xTiO3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure. Applied Nanoscience, 10(12), 5511. https://doi.org/10.1007/s13204-020-01481-0

Chicago Style (17th ed.) Citation

Debnath, Ajit, Vibhu Srivastava, Sanjai Singh, and Sunny. "Sol–gel Derived BST (BaxSr1−xTiO3) Thin Film Ferroelectrics for Non-volatile Memory Application with Metal–ferroelectric–semiconductor (MFS) Structure." Applied Nanoscience 10, no. 12 (2020): 5511. https://doi.org/10.1007/s13204-020-01481-0.

MLA (9th ed.) Citation

Debnath, Ajit, et al. "Sol–gel Derived BST (BaxSr1−xTiO3) Thin Film Ferroelectrics for Non-volatile Memory Application with Metal–ferroelectric–semiconductor (MFS) Structure." Applied Nanoscience, vol. 10, no. 12, 2020, p. 5511, https://doi.org/10.1007/s13204-020-01481-0.