Sol–gel derived BST (BaxSr1−xTiO3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure.

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Title: Sol–gel derived BST (BaxSr1−xTiO3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure.
Authors: Debnath, Ajit1, Srivastava, Vibhu1, Singh, Sanjai1, Sunny1, sunnymeharwal@gmail.com
Source: Applied Nanoscience; Dec2020, Vol. 10 Issue 12, p5511-5521, 11p
Database: Applied Science & Technology Source
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DbLabel: Applied Science & Technology Source
An: 147341032
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  Data: Sol–gel derived BST (BaxSr1−xTiO3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure.
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  Data: <searchLink fieldCode="AU" term="%22Debnath%2C+Ajit%22">Debnath, Ajit</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Srivastava%2C+Vibhu%22">Srivastava, Vibhu</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Singh%2C+Sanjai%22">Singh, Sanjai</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Sunny%22">Sunny</searchLink><relatesTo>1</relatesTo>, <i>sunnymeharwal@gmail.com</i>
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  Data: <searchLink fieldCode="JN" term="%22Applied+Nanoscience%22">Applied Nanoscience</searchLink>; Dec2020, Vol. 10 Issue 12, p5511-5521, 11p
PLink https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&db=aci&AN=147341032
RecordInfo BibRecord:
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      – Type: doi
        Value: 10.1007/s13204-020-01481-0
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      – Code: eng
        Text: English
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      – TitleFull: Sol–gel derived BST (BaxSr1−xTiO3) thin film ferroelectrics for non-volatile memory application with metal–ferroelectric–semiconductor (MFS) structure.
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            NameFull: Debnath, Ajit
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            NameFull: Srivastava, Vibhu
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            NameFull: Singh, Sanjai
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              Text: Dec2020
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              Y: 2020
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