Effect and extraction of series resistance in Al2O3‐InGaAs MOS with bulk‐oxide trap.

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Bibliographic Details
Title: Effect and extraction of series resistance in Al2O3‐InGaAs MOS with bulk‐oxide trap.
Authors: Yu, B.1, Yuan, Y.1, Chen, H.‐P.1, Ahn, J.2, McIntyre, P.C.2, Taur, Y.1, ytaur@eng.ucsd.edu
Source: Electronics Letters (Wiley-Blackwell); Mar2013, Vol. 49 Issue 6, p492-493, 2p
Database: Applied Science & Technology Source
Description
ISSN:00135194
DOI:10.1049/el.2013.0433