Yu, B., Yuan, Y., Chen, H., Ahn, J., McIntyre, P., & Taur, Y. (2013). Effect and extraction of series resistance in Al2O3‐InGaAs MOS with bulk‐oxide trap. Electronics Letters (Wiley-Blackwell), 49(6), 492. https://doi.org/10.1049/el.2013.0433
Chicago Style (17th ed.) CitationYu, B., Y. Yuan, H.‐P Chen, J. Ahn, P.C McIntyre, and Y. Taur. "Effect and Extraction of Series Resistance in Al2O3‐InGaAs MOS with Bulk‐oxide Trap." Electronics Letters (Wiley-Blackwell) 49, no. 6 (2013): 492. https://doi.org/10.1049/el.2013.0433.
MLA (9th ed.) CitationYu, B., et al. "Effect and Extraction of Series Resistance in Al2O3‐InGaAs MOS with Bulk‐oxide Trap." Electronics Letters (Wiley-Blackwell), vol. 49, no. 6, 2013, p. 492, https://doi.org/10.1049/el.2013.0433.