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Effect and extraction of series resistance in Al2O3‐InGaAs MOS with bulk‐oxide trap.

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Title: Effect and extraction of series resistance in Al2O3‐InGaAs MOS with bulk‐oxide trap.
Authors: Yu, B.1, Yuan, Y.1, Chen, H.‐P.1, Ahn, J.2, McIntyre, P.C.2, Taur, Y.1, ytaur@eng.ucsd.edu
Source: Electronics Letters (Wiley-Blackwell); Mar2013, Vol. 49 Issue 6, p492-493, 2p
Database: Applied Science & Technology Source
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  Availability: 0
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DbLabel: Applied Science & Technology Source
An: 148779807
AccessLevel: 2
PubType: Academic Journal
PubTypeId: academicJournal
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  Data: Effect and extraction of series resistance in Al2O3‐InGaAs MOS with bulk‐oxide trap.
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  Data: <searchLink fieldCode="AU" term="%22Yu%2C+B%2E%22">Yu, B.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Yuan%2C+Y%2E%22">Yuan, Y.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Chen%2C+H%2E‐P%2E%22">Chen, H.‐P.</searchLink><relatesTo>1</relatesTo><br /><searchLink fieldCode="AU" term="%22Ahn%2C+J%2E%22">Ahn, J.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22McIntyre%2C+P%2EC%2E%22">McIntyre, P.C.</searchLink><relatesTo>2</relatesTo><br /><searchLink fieldCode="AU" term="%22Taur%2C+Y%2E%22">Taur, Y.</searchLink><relatesTo>1</relatesTo>, <i>ytaur@eng.ucsd.edu</i>
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  Data: <searchLink fieldCode="JN" term="%22Electronics+Letters+%28Wiley-Blackwell%29%22">Electronics Letters (Wiley-Blackwell)</searchLink>; Mar2013, Vol. 49 Issue 6, p492-493, 2p
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        Value: 10.1049/el.2013.0433
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        Text: English
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      – TitleFull: Effect and extraction of series resistance in Al2O3‐InGaAs MOS with bulk‐oxide trap.
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              Text: Mar2013
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              Y: 2013
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